PBLS6001D,115 NXP Semiconductors, PBLS6001D,115 Datasheet
PBLS6001D,115
Specifications of PBLS6001D,115
PBLS6001D T/R
PBLS6001D T/R
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PBLS6001D,115 Summary of contents
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PBLS6001D 60 V PNP BISS loadswitch Rev. 02 — 7 September 2009 1. Product profile 1.1 General description PNP low V Resistor-Equipped Transistor (RET SOT457 (SC-74) small Surface Mounted Device (SMD) plastic package. 1.2 Features I Low V ...
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... NXP Semiconductors 2. Pinning information Table 2. Pin Ordering information Table 3. Type number PBLS6001D 4. Marking Table 4. Type number PBLS6001D PBLS6001D_2 Product data sheet Pinning Description emitter TR1 base TR1 output (collector) TR2 GND (emitter) TR2 input (base) TR2 collector TR1 Ordering information Package ...
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... NXP Semiconductors 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol TR1; PNP low V V CBO V CEO V EBO tot TR2; NPN resistor-equipped transistor V CBO V CEO V EBO tot Per device P tot T stg amb [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. ...
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... NXP Semiconductors (1) Ceramic PCB, Al (2) FR4 PCB, mounting pad for collector 1cm (3) FR4 PCB, standard footprint Fig 1. 6. Thermal characteristics Table 6. Symbol Per device R th(j-a) TR1; PNP low V R th(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. ...
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... NXP Semiconductors th(j-a) 0.75 (K/W) 0.5 0. 0.2 0.1 0.05 0. FR4 PCB, standard footprint Fig 2. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time; typical values th(j- (K/W) 0.75 0.5 2 0.33 10 0.2 0.1 0.05 10 0.02 0. FR4 PCB, mounting pad for collector 1cm Fig 3. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time ...
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... NXP Semiconductors th(j- (K/W) 0.75 0 0.33 0.2 0.1 0.05 10 0.02 0. Ceramic PCB standard footprint 2 3 Fig 4. TR1 (PNP): Transient thermal impedance from junction to ambient as a function of pulse time; typical values 7. Characteristics Table unless otherwise specified amb Symbol TR1; PNP low V ...
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... NXP Semiconductors Table unless otherwise specified amb Symbol off TR2; NPN resistor-equipped transistor I CBO I CEO I EBO CEsat V I(off) V I(on) R1 R2/ [1] Pulse test: t PBLS6001D_2 Product data sheet Characteristics …continued Parameter Conditions delay time Boff rise time turn-on time storage time ...
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... NXP Semiconductors 600 ( 400 (2) (3) 200 ( 100 C amb ( amb ( amb Fig 5. TR1 (PNP): DC current gain as a function of collector current; typical values 1 (V) 0.8 (1) (2) 0.6 (3) 0 amb ( amb ( 100 C amb Fig 7. TR1 (PNP): Base-emitter voltage as a function of collector current; typical values ...
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... NXP Semiconductors 2.0 I (mA 31.5 (A) 28.0 24.5 1.6 21.0 1.2 0.8 0.4 0 amb Fig 9. TR1 (PNP): Collector current as a function of collector-emitter voltage; typical values 1 V CEsat ( (1) (2) ( amb ( 100 Fig 11. TR1 (PNP): Collector-emitter saturation voltage as a function of collector current; typical values ...
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... NXP Semiconductors ( 150 C amb ( amb ( amb Fig 13. TR2 (NPN): DC current gain as a function of collector current; typical values I(on) (V) 10 (1) ( amb ( amb ( 100 C amb Fig 15. TR2 (NPN): On-state input voltage as a function of collector current; typical values PBLS6001D_2 Product data sheet ...
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... NXP Semiconductors 8. Test information Fig 17. BISS transistor switching time definition Fig 18. Test circuit for switching times PBLS6001D_2 Product data sheet (probe) oscilloscope 450 open 100 ; R C Bon Boff Rev. 02 — 7 September 2009 PBLS6001D 60 V PNP BISS loadswitch input pulse (idealized waveform) ...
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... NXP Semiconductors 9. Package outline Fig 19. Package outline SOT457 (SC-74) 10. Packing information Table 8. The indicated -xxx are the last three digits of the 12NC ordering code. Type number PBLS6001D [1] For further information and the availability of packing methods, see [2] T1: normal taping [3] T2: reverse taping ...
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... NXP Semiconductors 11. Soldering Fig 20. Reflow soldering footprint 5.05 Fig 21. Wave soldering footprint PBLS6001D_2 Product data sheet 3.45 1.95 0.95 3.30 2.825 1.60 1.70 3.10 3.20 Dimensions in mm 5.30 1.40 4.30 Dimensions in mm Rev. 02 — 7 September 2009 PBLS6001D 60 V PNP BISS loadswitch ...
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... PBLS6001D_2 20090907 • Modifications: This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. • Figure 6 “TR1 (PNP): Collector-emitter saturation voltage as a function of collector current; ...
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... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
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... NXP Semiconductors 15. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . 11 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 12 10 Packing information Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 12 Revision history ...