PBLS2004D,115 NXP Semiconductors, PBLS2004D,115 Datasheet

LOADSWITCH PNP 20V 1A SOT457

PBLS2004D,115

Manufacturer Part Number
PBLS2004D,115
Description
LOADSWITCH PNP 20V 1A SOT457
Manufacturer
NXP Semiconductors
Series
-r
Datasheet
1.PBLS2004D115.pdf (16 pages)

Specifications of PBLS2004D,115

Package / Case
SC-74-6
Transistor Type
1 NPN Pre-Biased, 1 PNP
Current - Collector (ic) (max)
100mA, 1A
Voltage - Collector Emitter Breakdown (max)
50V, 20V
Resistor - Base (r1) (ohms)
22K
Resistor - Emitter Base (r2) (ohms)
22K
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 5mA, 5V / 220 @ 500mA, 2V
Vce Saturation (max) @ Ib, Ic
150mV @ 500µA, 10mA / 280mV @ 100mA, 1A
Current - Collector Cutoff (max)
1µA, 100nA
Frequency - Transition
185MHz
Power - Max
600mW
Mounting Type
Surface Mount
Configuration
Dual
Transistor Polarity
NPN/PNP
Typical Input Resistor
22 KOhm @ NPN
Typical Resistor Ratio
1 @ NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V @ NPN or 20 V @ PNP
Peak Dc Collector Current
100 mA @ NPN or 1000 mA @ PNP
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934059273115
PBLS2004D T/R
PBLS2004D T/R
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
PNP low V
Equipped Transistor (RET) in a SOT457 (SC-74) small Surface Mounted Device (SMD)
plastic package.
Table 1:
[1]
Symbol
TR1; PNP low V
V
I
R
TR2; NPN resistor-equipped transistor
V
I
R1
R2/R1
C
O
CEO
CEO
CEsat
PBLS2004D
20 V PNP BISS loadswitch
Rev. 01 — 23 June 2005
Low V
Low threshold voltage (< 1 V) compared to MOSFET
Low drive power required
Space-saving solution
Reduction of component count
Supply line switches
Battery charger switches
High-side switches for LEDs, drivers and backlights
Portable equipment
Pulse test: t
CEsat
CEsat
Quick reference data
Parameter
collector-emitter voltage
collector current (DC)
collector-emitter saturation
resistance
collector-emitter voltage
output current
bias resistor 1 (input)
bias resistor ratio
p
(BISS) and resistor-equipped transistor in one package
CEsat
Breakthrough in Small Signal (BISS) transistor and NPN Resistor-
300 s;
transistor
0.02.
Conditions
open base
I
I
open base
C
B
= 100 mA
= 1 A;
[1]
Min
-
-
-
-
-
15.4
0.8
Product data sheet
Typ
-
-
185
-
-
22
1
Max
280
50
100
28.6
1.2
20
1
Unit
V
A
m
V
mA
k

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PBLS2004D,115 Summary of contents

Page 1

PBLS2004D 20 V PNP BISS loadswitch Rev. 01 — 23 June 2005 1. Product profile 1.1 General description PNP low V Equipped Transistor (RET SOT457 (SC-74) small Surface Mounted Device (SMD) plastic package. 1.2 Features Low V Low ...

Page 2

Philips Semiconductors 2. Pinning information Table 2: Pin Ordering information Table 3: Type number PBLS2004D 4. Marking Table 4: Type number PBLS2004D 5. Limiting values Table 5: In accordance with the Absolute Maximum ...

Page 3

Philips Semiconductors Table 5: In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol TR2; NPN resistor-equipped transistor V CBO V CEO V EBO tot Per device P tot T stg T ...

Page 4

Philips Semiconductors 6. Thermal characteristics Table 6: Symbol Per device R th(j-a) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 ...

Page 5

Philips Semiconductors th(j- (K/W) 0.75 0.5 2 0.33 10 0.2 0.1 0.05 10 0.02 0. FR4 PCB, mounting pad for collector 1 cm Fig 3. TR1 (PNP): Transient thermal ...

Page 6

Philips Semiconductors 7. Characteristics Table unless otherwise specified. amb Symbol Parameter TR1; PNP low V I CBO I CES I EBO CEsat R CEsat V BEsat V BEon ...

Page 7

Philips Semiconductors Table unless otherwise specified. amb Symbol Parameter TR2; NPN resistor-equipped transistor I CBO I CEO I EBO CEsat V I(off) V I(on) R1 R2/ [1] Pulse test: t ...

Page 8

Philips Semiconductors 1000 h FE 800 (1) 600 (2) 400 (3) 200 ( 100 C amb ( amb ( amb ...

Page 9

Philips Semiconductors 2 (A) 1.6 1.2 0.8 0 amb Fig 9. TR1 (PNP): Collector current as a function of collector-emitter voltage; typical values 1 V CEsat ...

Page 10

Philips Semiconductors (1) ( 150 C amb ( amb ( amb Fig ...

Page 11

Philips Semiconductors 8. Test information Fig 17. BISS transistor switching time definition Fig 18. Test circuit for switching times PBLS2004D_1 Product data sheet ...

Page 12

Philips Semiconductors 9. Package outline Fig 19. Package outline SOT457 (SC-74) 10. Packing information Table 8: The indicated -xxx are the last three digits of the 12NC ordering code. Type number PBLS2004D [1] For further information and the availability of ...

Page 13

Philips Semiconductors 11. Soldering Fig 20. Reflow soldering footprint 5.05 Fig 21. Wave soldering footprint PBLS2004D_1 Product data sheet 3.45 1.95 0.95 3.30 2.825 1.60 1.70 3.10 3.20 Dimensions in mm 5.30 1.40 4.30 Dimensions in mm Rev. 01— 23 ...

Page 14

Philips Semiconductors 12. Revision history Table 9: Revision history Document ID Release date PBLS2004D_1 20050623 PBLS2004D_1 Product data sheet Data sheet status Change notice Doc. number Product data sheet - Rev. 01— 23 June 2005 PBLS2004D 20 V PNP BISS ...

Page 15

Philips Semiconductors 13. Data sheet status [1] Level Data sheet status Product status I Objective data Development II Preliminary data Qualification III Product data Production [1] Please consult the most recently issued data sheet before initiating or completing a design. ...

Page 16

Philips Semiconductors 18. Contents 1 Product profi 1.1 General description ...

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