PBLS4005Y,115 NXP Semiconductors, PBLS4005Y,115 Datasheet - Page 4

• Manufacturer Part Number: PBLS4005Y,115
• Description: LOADSWITCH PNP 40V 500MA SOT363
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PBLS4005Y,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 1 NPN Pre-Biased, 1 PNP
• Current - Collector (ic) (max): 100mA, 500mA
• Voltage - Collector Emitter Breakdown (max): 50V, 40V
• Resistor - Base (r1) (ohms): 47K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 5mA, 5V / 150 @ 100mA, 2V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA / 350mV @ 50mA, 500mA
• Current - Collector Cutoff (max): 1µA
• Frequency - Transition: 300MHz
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Typical Input Resistor: 47 KOhm
• Typical Resistor Ratio: 1
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V @ NPN or 40 V @ PNP
• Peak Dc Collector Current: 100 mA @ NPN or 500 mA @ PNP
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934058648115; PBLS4005Y T/R; PBLS4005Y T/R

NXP Semiconductors
7. Characteristics
PBLS4005Y_PBLS4005V_3
Product data sheet
Table 8.
T
[1]
Symbol
TR1; PNP low V
I
I
h
V
R
V
V
f
C
TR2; NPN resistor-equipped transistor
I
I
I
h
V
V
V
R1
R2/R1
C
CBO
EBO
T
CBO
CEO
EBO
amb
FE
FE
CEsat
BEsat
BEon
CEsat
I(off)
I(on)
CEsat
c
c
Pulse test: t
= 25 C unless otherwise specified.
Characteristics
Parameter
collector-base cut-off
current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
collector-emitter
saturation resistance
base-emitter
saturation voltage
base-emitter
turn-on voltage
transition frequency
collector capacitance
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
off-state input voltage V
on-state input voltage V
bias resistor 1 (input)
bias resistor ratio
collector capacitance
p
CEsat
300 s;
transistor
Rev. 03 — 16 February 2009
0.02.
Conditions
V
V
T
V
V
V
V
I
I
I
I
I
I
V
I
f = 100 MHz
V
f = 1 MHz
V
V
V
T
V
V
I
V
f = 1 MHz
C
C
C
C
C
C
C
C
j
j
CB
CB
EB
CE
CE
CE
CE
CB
CB
CE
CE
EB
CE
CE
CE
CB
= 150 C
= 150 C
= 10 mA; I
= 100 mA; I
= 200 mA; I
= 500 mA; I
= 500 mA; I
= 500 mA; I
= 100 mA; V
= 10 mA; I
PBLS4005Y; PBLS4005V
= 40 V; I
= 40 V; I
= 5 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 2 V; I
= 10 V; I
= 50 V; I
= 30 V; I
= 30 V; I
= 5 V; I
= 5 V; I
= 5 V; I
= 0.3 V; I
= 10 V; I
C
C
C
C
C
C
C
C
E
B
B
B
E
= 0 A
= 5 mA
= 100 A
C
E
E
B
E
= 0 A
= 0 A
= 0 A
= 0 A;
= 0.5 mA
= i
= 10 mA
= 100 mA
= 500 mA
= 100 mA
B
B
B
B
B
= 5 mA
= 0 A
= 0 A;
= 0.5 mA
= i
CE
= 5 mA
= 10 mA
= 50 mA
= 50 mA
= 50 mA
e
e
= 0 A;
= 5 V;
= 0 A;
[1]
[1]
[1]
[1]
[1]
[1]
40 V PNP BISS loadswitch
Min
-
-
-
200
150
40
-
-
-
-
-
-
-
100
-
-
-
-
-
80
-
-
3
33
0.8
-
Typ
-
-
-
-
-
-
-
-
-
-
440
-
-
300
-
-
-
-
-
-
-
1.2
1.6
47
1
-
© NXP B.V. 2009. All rights reserved.
Max
-
-
-
700
-
10
100
1
50
90
-
150
0.8
-
61
1.2
2.5
100
50
100
50
130
200
350
1.2
1.1
Unit
nA
nA
mV
mV
mV
mV
m
V
V
MHz
pF
nA
mV
V
V
k
pF
4 of 11
A
A
A
A