PBLS1501Y,115 NXP Semiconductors, PBLS1501Y,115 Datasheet

LOADSWITCH PNP 15V 500MA SOT363

PBLS1501Y,115

Manufacturer Part Number
PBLS1501Y,115
Description
LOADSWITCH PNP 15V 500MA SOT363
Manufacturer
NXP Semiconductors
Series
-r
Datasheet

Specifications of PBLS1501Y,115

Package / Case
SC-70-6, SC-88, SOT-363
Transistor Type
1 NPN Pre-Biased, 1 PNP
Current - Collector (ic) (max)
100mA, 500mA
Voltage - Collector Emitter Breakdown (max)
50V, 15V
Resistor - Base (r1) (ohms)
2.2K
Resistor - Emitter Base (r2) (ohms)
2.2K
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 20mA, 5V / 150 @ 100mA, 2V
Vce Saturation (max) @ Ib, Ic
150mV @ 500µA, 10mA / 250mV @ 50mA, 500mA
Current - Collector Cutoff (max)
1µA, 100nA
Frequency - Transition
280MHz
Power - Max
300mW
Mounting Type
Surface Mount
Configuration
Dual
Transistor Polarity
NPN/PNP
Typical Input Resistor
2.2 KOhms
Typical Resistor Ratio
1
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V at NPN, 15 V at PNP
Peak Dc Collector Current
100 mA at NPN, 500 mA at PNP
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934058052115
PBLS1501Y T/R
PBLS1501Y T/R
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
Low V
Table 1.
I
I
I
I
I
I
I
I
I
Table 2.
Type number
PBLS1501Y
PBLS1501V
Symbol
TR1; PNP: low V
V
I
R
TR2; NPN: resistor-equipped transistor
V
C
CEO
CEO
CEsat
PBLS1501Y; PBLS1501V
15 V PNP BISS loadswitch
Rev. 02 — 24 August 2009
Low V
Low ‘threshold’ voltage ( 1 V) compared to MOSFET
Low drive power required
Space-saving solution
Reduction of component count
Supply line switches
Battery charger switches
High-side switches for LEDs, drivers and backlights
Portable equipment
CEsat
CEsat
Product overview
Quick reference data
PNP transistor and NPN resistor-equipped transistor in one package.
Parameter
collector-emitter voltage
collector-current (DC)
equivalent on-resistance
collector-emitter voltage
(BISS) transistor and resistor-equipped transistor in one package
CEsat
transistor
Package
NXP
SOT363
SOT666
Conditions
open base
I
I
open base
C
B
50 mA
500 mA;
Min
-
-
-
-
JEITA
SC-88
-
Typ
-
-
300
-
Product data sheet
Max
500
50
15
500
Unit
V
mA
m
V

Related parts for PBLS1501Y,115

PBLS1501Y,115 Summary of contents

Page 1

PBLS1501Y; PBLS1501V 15 V PNP BISS loadswitch Rev. 02 — 24 August 2009 1. Product profile 1.1 General description Low V CEsat Table 1. Type number PBLS1501Y PBLS1501V 1.2 Features I Low V I Low ‘threshold’ voltage ( 1 V) ...

Page 2

... NXP Semiconductors Table 2. Symbol R2/R1 2. Pinning information Table 3. Pin Ordering information Table 4. Type number PBLS1501Y PBLS1501V 4. Marking Table 5. Type number PBLS1501Y PBLS1501V [ made in Hong Kong * = t: made in Malaysia * = W: made in China PBLS1501Y_PBLS1501V_2 Product data sheet PBLS1501Y; PBLS1501V Quick reference data …continued Parameter Conditions ...

Page 3

... NXP Semiconductors 5. Limiting values Table 6. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Transistor TR1: PNP V CBO V CEO V EBO tot Transistor TR2: NPN V CBO V CEO V EBO tot Per device P tot T stg amb [1] Device mounted on a FR4 printed-circuit board, single-sided copper, tin-plated and standard footprint. ...

Page 4

... NXP Semiconductors 7. Characteristics Table 8. Characteristics unless otherwise specified amb Symbol Parameter Transistor TR1: PNP I collector-base cut-off CBO current I collector-emitter CES cut-off current I emitter-base cut-off EBO current h DC current gain FE V collector-emitter CEsat saturation voltage R equivalent CEsat on-resistance V base-emitter BEsat saturation voltage ...

Page 5

... NXP Semiconductors 600 h FE (1) 400 (2) 200 ( (1) T 150 C amb ( amb ( amb Fig 1. TR1(PNP): DC current gain as a function of collector current; typical values 1100 V BE (mV) 900 (1) 700 (2) 500 (3) 300 100 ( amb ( amb (3) T 150 C amb Fig 3. TR1(PNP): Base-emitter voltage as a function of collector current; typical values ...

Page 6

... NXP Semiconductors 1200 ( (2) (mA) (3) (4) 800 400 amb ( ( ( ( ( ( ( ( ( (10 Fig 5. TR1(PNP): Collector current as a function of collector-emitter voltage; typical values PBLS1501Y_PBLS1501V_2 Product data sheet PBLS1501Y; PBLS1501V 001aaa182 R CEsat ...

Page 7

... NXP Semiconductors 1 V CEsat ( ( amb ( 100 Fig 7. TR1(PNP): Collector-emitter saturation voltage as a function of collector current; typical values PBLS1501Y_PBLS1501V_2 Product data sheet PBLS1501Y; PBLS1501V 006aaa004 CEsat ( ) (mA amb ( ( ( Fig 8. TR1(PNP): Equivalent on-resistance as a function of collector current; typical values Rev. 02 — 24 August 2009 ...

Page 8

... NXP Semiconductors (1) T 150 C amb ( amb ( amb Fig 9. TR2(NPN): DC current gain as a function of collector current; typical values I(on) (V) 10 (1) ( amb ( amb (3) T 100 C amb Fig 11. TR2(NPN): On-state input voltage as a function of collector current; typical values PBLS1501Y_PBLS1501V_2 Product data sheet PBLS1501Y ...

Page 9

... NXP Semiconductors 8. Package outline Plastic surface-mounted package; 6 leads y 6 pin 1 index DIMENSIONS (mm are the original dimensions UNIT max 0.30 1.1 0.25 mm 0.1 0.20 0.8 0.10 OUTLINE VERSION IEC SOT363 Fig 13. Package outline SOT363 (SC-88) PBLS1501Y_PBLS1501V_2 Product data sheet PBLS1501Y; PBLS1501V scale ...

Page 10

... NXP Semiconductors Plastic surface-mounted package; 6 leads pin 1 index DIMENSIONS (mm are the original dimensions) UNIT 0.6 0.27 0.18 1.7 mm 0.5 0.17 0.08 1.5 OUTLINE VERSION IEC SOT666 Fig 14. Package outline SOT666 PBLS1501Y_PBLS1501V_2 Product data sheet PBLS1501Y; PBLS1501V scale 1.3 1.7 0.3 1.0 ...

Page 11

... NXP Semiconductors 9. Packing information Table 9. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code. Type number Package PBLS1501Y SOT363 PBLS1501V SOT666 [1] For further information and the availability of packing methods, see [2] T1: normal taping [3] T2: reverse taping ...

Page 12

... Product data sheet PBLS1501Y; PBLS1501V Data sheet status Product data sheet This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. Table 3 “Discrete pinning”: amended Figure 13 “ ...

Page 13

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 14

... NXP Semiconductors 13. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 4 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 Packing information Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 11 Legal information ...

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