PUMD3,115 NXP Semiconductors, PUMD3,115 Datasheet - Page 6

TRANS NPN/PNP 50V 100MA SOT363

PUMD3,115

Manufacturer Part Number
PUMD3,115
Description
TRANS NPN/PNP 50V 100MA SOT363
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PUMD3,115

Package / Case
SC-70-6, SC-88, SOT-363
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
10K
Resistor - Emitter Base (r2) (ohms)
10K
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
150mV @ 500µA, 10mA
Current - Collector Cutoff (max)
1µA
Power - Max
300mW
Mounting Type
Surface Mount
Configuration
Dual
Transistor Polarity
NPN/PNP
Typical Input Resistor
10 KOhms
Typical Resistor Ratio
1
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
100 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Collector-emitter Voltage
50V
Dc Current Gain (min)
30
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
6
Package Type
SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / Rohs Status
Compliant
Other names
568-5039-2
934050170115
PUMD3 T/R
PUMD3 T/R
PUMD3,115

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PUMD3,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
PEMD3_PIMD3_PUMD3_10
Product data sheet
Fig 5.
Fig 7.
V
h
−10
(V)
I(on)
−10
−10
−10
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
FE
−10
−10
−1
−1
−10
−1
−10
3
2
2
V
TR2 (PNP): DC current gain as a function of
collector current; typical values
V
TR2 (PNP): On-state input voltage as a
function of collector current; typical values
−1
−1
CE
amb
amb
amb
CE
amb
amb
amb
= −5 V
= −0.3 V
= 150 °C
= 25 °C
= −40 °C
= −40 °C
= 25 °C
= 100 °C
−1
−1
(1)
(3)
(2)
−10
−10
(1)
(3)
I
I
(2)
C
C
006aaa046
(mA)
006aaa048
(mA)
Rev. 10 — 15 November 2009
−10
−10
NPN/PNP resistor-equipped transistors; R1 = 10 kΩ, R2 = 10 kΩ
2
2
Fig 6.
Fig 8.
V
V
−10
−10
−10
CEsat
PEMD3; PIMD3; PUMD3
(V)
(V)
I(off)
(1) T
(2) T
(3) T
(1) T
(2) T
(3) T
−10
−1
−1
−10
−1
−2
−1
−1
I
TR2 (PNP): Collector-emitter voltage as a
function of collector current; typical values
V
TR2 (PNP): Off-state input voltage as a
function of collector current; typical values
C
−2
amb
amb
amb
amb
amb
amb
CE
/I
B
= −5 V
= 20
= 100 °C
= 25 °C
= −40 °C
= −40 °C
= 25 °C
= 100 °C
−10
−1
(1)
(2)
(3)
−10
(1)
(3)
−1
(2)
I
C
(mA)
I
© NXP B.V. 2009. All rights reserved.
C
006aaa047
006aaa049
(mA)
−10
−10
2
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