PEMB24,115 NXP Semiconductors, PEMB24,115 Datasheet - Page 9

TRANS PNP W/RES 50V SOT-666

PEMB24,115

Manufacturer Part Number
PEMB24,115
Description
TRANS PNP W/RES 50V SOT-666
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PEMB24,115

Package / Case
SS Mini-6 (SOT-666)
Transistor Type
2 PNP - Pre-Biased (Dual)
Current - Collector (ic) (max)
20mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
100K
Resistor - Emitter Base (r2) (ohms)
100K
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 5mA, 5V
Vce Saturation (max) @ Ib, Ic
150mV @ 250µA, 5mA
Current - Collector Cutoff (max)
1µA
Power - Max
300mW
Mounting Type
Surface Mount
Configuration
Dual
Transistor Polarity
PNP
Typical Input Resistor
100 KOhm
Typical Resistor Ratio
1
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
20 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934058917115
PEMB24 T/R
PEMB24 T/R
NXP Semiconductors
10. Revision history
Table 10.
PEMB24_PUMB24_2
Product data sheet
Document ID
PEMB24_PUMB24_2
Modifications:
PEMB24_PUMB24_1
Revision history
Release date
20090902
20050218
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
Figure 5 “Package outline SOT363
Figure 6 “Package outline
PNP/PNP resistor-equipped transistors; R1 = 100 k , R2 = 100 k
Rev. 02 — 2 September 2009
Data sheet status
Product data sheet
Product data sheet
SOT666”: updated
(SC-88)”: updated
Change notice
-
-
PEMB24; PUMB24
Supersedes
PEMB24_PUMB24_1
-
© NXP B.V. 2009. All rights reserved.
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