PUMH9,165 NXP Semiconductors, PUMH9,165 Datasheet - Page 4

• Manufacturer Part Number: PUMH9,165
• Description: TRANS NPN 50V 100MA SOT363
• Manufacturer: NXP Semiconductors

Specifications of PUMH9,165

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 NPN - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 10K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 100mV @ 250µA, 5mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Configuration: Dual
• Transistor Polarity: NPN
• Typical Input Resistor: 10 KOhms
• Typical Resistor Ratio: 0.213
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055557165; PUMH9 /T2; PUMH9 /T2

NXP Semiconductors
THERMAL CHARACTERISTICS
Notes
1. Device mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
2. Reflow soldering is the only recommended soldering method.
CHARACTERISTICS
T
2004 Apr 14
Per transistor
R
Per device
R
I
I
I
h
V
V
V
R1
C
SYMBOL
R2
------- -
R1
amb
CBO
CEO
EBO
SYMBOL
FE
CEsat
i(off)
i(on)
NPN/NPN resistor-equipped transistors;
R1 = 10 kΩ, R2 = 47 kΩ
th(j-a)
th(j-a)
c
= 25 °C unless otherwise specified.
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage I
input-off voltage
input-on voltage
input resistor
resistor ratio
collector capacitance
thermal resistance from junction to ambient
thermal resistance from junction to ambient
SOT363
SOT457
SOT666
SOT363
SOT457
SOT666
PARAMETER
PARAMETER
V
V
V
V
V
V
V
V
f = 1 MHz
C
CB
CE
CE
EB
CE
CE
CE
CB
= 5 mA; I
= 5 V; I
= 50 V; I
= 30 V; I
= 30 V; I
= 5 V; I
= 5 V; I
= 0.3 V; I
= 10 V; I
4
CONDITIONS
C
B
C
C
T
note 1
note 1
notes 1 and 2
T
note 1
note 1
notes 1 and 2
E
B
B
E
= 0.25 mA
= 0 A
= 5 mA
= 100 μA
C
amb
amb
= 0 A
= 0 A
= 0 A; T
= i
= 1 mA
CONDITIONS
e
≤ 25 °C
≤ 25 °C
= 0 A;
j
= 150 °C
PIMH9; PUMH9; PEMH9
−
−
−
−
100
−
−
1.4
7
3.7
−
MIN.
VALUE
625
417
625
416
208
416
−
−
−
−
−
−
0.7
0.8
10
4.7
−
TYP.
Product data sheet
100
1
50
150
−
100
0.5
−
13
5.7
2.5
MAX.
UNIT
K/W
K/W
K/W
K/W
K/W
K/W
nA
μA
μA
μA
mV
V
V
kΩ
pF
UNIT