PUMD10,125 NXP Semiconductors, PUMD10,125 Datasheet - Page 5

• Manufacturer Part Number: PUMD10,125
• Description: TRANS ARRAY NPN/PNP SOT-363
• Manufacturer: NXP Semiconductors

Specifications of PUMD10,125

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 5V
• Vce Saturation (max) @ Ib, Ic: 100mV @ 250µA, 5mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 200mW
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934055239125

NXP Semiconductors
CHARACTERISTICS
T
2004 Apr 15
Per transistor; for the PNP transistor with negative polarity
I
I
I
h
V
V
V
R1
C
SYMBOL
R2
------- -
R1
amb
CBO
CEO
EBO
FE
CEsat
i(off)
i(on)
NPN/PNP resistor-equipped transistors;
R1 = 2.2 kΩ, R2 = 47 kΩ
c
= 25 °C; unless otherwise specified.
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
input-off voltage
input-on voltage
input resistor
resistor ratio
collector capacitance
TR1 (NPN)
TR2 (PNP)
PARAMETER
V
V
V
V
V
I
V
V
V
f = 1 MHz
C
CB
CE
CE
EB
CE
CE
CE
CB
= 5 mA; I
= 5 V; I
= 50 V; I
= 30 V; I
= 30 V; I
= 5 V; I
= 5 V; I
= 0.3 V; I
= 10 V; I
5
CONDITIONS
C
C
B
C
E
B
B
E
= 0 A
= 0.25 mA
= 10 mA
= 100 μA
C
= 0 A
= 0 A
= 0 A; T
= i
= 5 mA
e
= 0 A;
j
= 150 °C
−
−
−
−
100
−
−
1.1
1.54
17
−
−
MIN.
PEMD10; PUMD10
−
−
−
−
−
−
0.6
0.75
2.2
21
−
−
TYP.
Product data sheet
100
1
50
180
−
100
0.5
−
2.86
26
2.5
3
MAX.
nA
μA
μA
μA
mV
V
V
kΩ
pF
pF
UNIT