PUMH30,115 NXP Semiconductors, PUMH30,115 Datasheet - Page 6

TRANS NPN/NPN W/RES 50V SOT-363

PUMH30,115

Manufacturer Part Number
PUMH30,115
Description
TRANS NPN/NPN W/RES 50V SOT-363
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PUMH30,115

Package / Case
SC-70-6, SC-88, SOT-363
Transistor Type
2 NPN - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
2.2K
Dc Current Gain (hfe) (min) @ Ic, Vce
30 @ 20mA, 5V
Vce Saturation (max) @ Ib, Ic
150mV @ 500µA, 10mA
Current - Collector Cutoff (max)
1µA
Power - Max
300mW
Mounting Type
Surface Mount
Configuration
Dual
Transistor Polarity
NPN
Typical Input Resistor
2.2 KOhm
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
50 V
Peak Dc Collector Current
100 mA
Maximum Operating Temperature
+ 150 C
Minimum Operating Temperature
- 65 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Resistor - Emitter Base (r2) (ohms)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934059932115
PUMH30 T/R
PUMH30 T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PUMH30,115
Manufacturer:
NXP
Quantity:
21 400
Part Number:
PUMH30,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Philips Semiconductors
10. Soldering
PEMH30_PUMH30_1
Product data sheet
Fig 5. Reflow soldering footprint SOT363 (SC-88)
Fig 6. Wave soldering footprint SOT363 (SC-88)
Dimensions in mm
Dimensions in mm
Dimensions in mm
solder lands
solder resist
occupied area
NPN/NPN double resistor-equipped transistors; R1 = 2.2 k , R2 = open
4.50
solder lands
solder resist
solder paste
occupied area
Rev. 01 — 28 March 2006
2.35
transport direction during soldering
0.50
(4 )
5.25
1.15
3.75
0.50
(4 )
PEMH30; PUMH30
2.65
1.20
2.40
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
0.60
(2 )
MSA432
0.40
(2 )
0.30
0.90 2.10
1.00
sot363
4.00
6 of 10

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