PUMD30,115 NXP Semiconductors, PUMD30,115 Datasheet - Page 9

• Manufacturer Part Number: PUMD30,115
• Description: TRANS NPN/NPN W/RES 50V SOT-363
• Manufacturer: NXP Semiconductors

Specifications of PUMD30,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 20mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Typical Input Resistor: 2.2 KOhms
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Resistor - Emitter Base (r2) (ohms): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934059934115; PUMD30 T/R; PUMD30 T/R

Philips Semiconductors
11. Revision history
Table 10.
PEMD30_PUMD30_1
Product data sheet
Document ID
PEMD30_PUMD30_1
Revision history
Release date
20060331
NPN/PNP double resistor-equipped transistors; R1 = 2.2 k , R2 = open
Data sheet status
Product data sheet
Rev. 01 — 31 March 2006
Change notice
-
PEMD30; PUMD30
© Koninklijke Philips Electronics N.V. 2006. All rights reserved.
Supersedes
-
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