PUMD15,115 NXP Semiconductors, PUMD15,115 Datasheet - Page 4

• Manufacturer Part Number: PUMD15,115
• Description: TRANS NPN/PNP 50V 100MA SOT363
• Manufacturer: NXP Semiconductors

Specifications of PUMD15,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Resistor - Emitter Base (r2) (ohms): 4.7K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 10mA, 5V
• Vce Saturation (max) @ Ib, Ic: 150mV @ 500µA, 10mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Typical Input Resistor: 4.7 KOhms
• Typical Resistor Ratio: 1
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Power Dissipation: 200 mW
• Maximum Operating Temperature: + 150 C
• Emitter- Base Voltage Vebo: 10 V
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934057891115; PUMD15 T/R; PUMD15 T/R

NXP Semiconductors
6. Thermal characteristics
7. Characteristics
PEMD15_PUMD15_3
Product data sheet
Table 7.
[1]
[2]
Table 8.
T
Symbol
Per transistor
R
Per device
R
Symbol
Per transistor; for the PNP transistor with negative polarity
I
I
I
h
V
V
V
R1
R2/R1
C
CBO
CEO
EBO
amb
FE
CEsat
I(off)
I(on)
th(j-a)
th(j-a)
c
Device mounted on a FR4 PCB, single-sided copper, tin-plated and standard footprint.
Reflow soldering is the only recommended soldering method.
= 25 C unless otherwise specified.
Parameter
collector-base cut-off
current
collector-emitter
cut-off current
emitter-base cut-off
current
DC current gain
collector-emitter
saturation voltage
off-state input voltage V
on-state input voltage V
bias resistor 1 (input)
bias resistor ratio
collector capacitance V
Thermal characteristics
Characteristics
Parameter
thermal resistance from
junction to ambient
thermal resistance from
junction to ambient
TR1 (NPN)
TR2 (PNP)
SOT363
SOT666
SOT363
SOT666
NPN/PNP resistor-equipped transistors; R1 = 4.7 k , R2 = 4.7 k
Rev. 03 — 2 September 2009
Conditions
V
V
V
T
V
V
I
f = 1 MHz
C
j
CB
CE
CE
EB
CE
CE
CE
CB
= 150 C
= 10 mA; I
Conditions
in free air
in free air
= 5 V; I
= 50 V; I
= 30 V; I
= 30 V; I
= 5 V; I
= 5 V; I
= 0.3 V; I
= 10 V; I
C
C
C
E
B
B
B
E
= 0 A
= 10 mA
= 100 A
C
= 0 A
= 0 A
= 0 A;
= 0.5 mA
= i
= 20 mA
e
= 0 A;
PEMD15; PUMD15
[1][2]
[1][2]
[1]
[1]
Min
-
-
-
-
Min
-
-
-
-
30
-
-
2.5
3.3
0.8
-
-
Typ
-
-
-
-
Typ
-
-
-
-
-
-
1.1
1.9
4.7
1
-
-
© NXP B.V. 2009. All rights reserved.
Max
625
625
416
416
Max
100
1
50
0.9
-
150
0.5
-
6.1
1.2
2.5
3
Unit
K/W
K/W
K/W
K/W
4 of 10
Unit
nA
mA
mV
V
V
k
pF
pF
A
A