PUMD10,115 NXP Semiconductors, PUMD10,115 Datasheet - Page 9

• Manufacturer Part Number: PUMD10,115
• Description: TRANS NPN/PNP 50V 100MA SOT363
• Manufacturer: NXP Semiconductors

Specifications of PUMD10,115

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 2.2K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 5V
• Vce Saturation (max) @ Ib, Ic: 100mV @ 250µA, 5mA
• Current - Collector Cutoff (max): 1µA
• Power - Max: 300mW
• Mounting Type: Surface Mount
• Configuration: Dual
• Transistor Polarity: NPN/PNP
• Typical Input Resistor: 2.2 KOhms
• Typical Resistor Ratio: 0.047
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Peak Dc Collector Current: 100 mA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055239115; PUMD10 T/R; PUMD10 T/R

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This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal
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R75/05/pp9
Date of release: 2004 Apr 15
Document order number: 9397 750 13097