PUMD6,135 NXP Semiconductors, PUMD6,135 Datasheet - Page 4

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PUMD6,135

Manufacturer Part Number
PUMD6,135
Description
TRANSISTOR ARRAY NPN/PNP SOT363
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PUMD6,135

Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
4.7K
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 1mA, 5V
Vce Saturation (max) @ Ib, Ic
100mV @ 250µA, 5mA
Current - Collector Cutoff (max)
1µA
Power - Max
300mW
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Frequency - Transition
-
Resistor - Emitter Base (r2) (ohms)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
934055430135
NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board, single-sided copper, standard footprint.
CHARACTERISTICS
T
2004 Apr 07
Per transistor
R
Per device
R
Per transistor; for the PNP transistor with negative polarity
I
I
I
h
V
R1
C
SYMBOL
SYMBOL
amb
CBO
CEO
EBO
FE
CEsat
NPN/PNP resistor-equipped transistors;
R1 = 4.7 kΩ, R2 = open
th(j-a)
th(j-a)
c
= 25 °C; unless otherwise specified.
thermal resistance from junction to
ambient
thermal resistance from junction to
ambient
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
input resistor
collector capacitance
SOT363
SOT666
SOT363
SOT666
TR1 (NPN)
TR2 (PNP)
PARAMETER
PARAMETER
note 1
note 1
V
V
V
V
V
I
I
C
E
CB
CE
CE
EB
CE
= I
= 5 mA; I
= 5 V; I
= 50 V; I
= 30 V; I
= 30 V; I
= 5 V; I
e
= 0; V
4
CONDITIONS
CONDITIONS
C
C
B
CB
E
B
B
= 0
= 0.25 mA
= 1 mA
= 0
= 0
= 0; T
= 10 V; f = 1 MHz
j
= 150 °C
200
3.3
MIN.
VALUE
PEMD6; PUMD6
625
625
416
416
4.7
TYP.
Product data sheet
100
1
50
100
100
6.1
2.5
3
MAX.
UNIT
K/W
K/W
K/W
K/W
nA
μA
μA
nA
mV
pF
pF
UNIT

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