ISPLSI 1032E-70LJ LATTICE SEMICONDUCTOR, ISPLSI 1032E-70LJ Datasheet - Page 12
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ISPLSI 1032E-70LJ
Manufacturer Part Number
ISPLSI 1032E-70LJ
Description
CPLD ispLSI® 1000E Family 6K Gates 128 Macro Cells 70MHz EECMOS Technology 5V 84-Pin PLCC
Manufacturer
LATTICE SEMICONDUCTOR
Datasheet
1.ISPLSI_1032E-100LT.pdf
(17 pages)
Specifications of ISPLSI 1032E-70LJ
Package
84PLCC
Family Name
ispLSI® 1000E
Device System Gates
6000
Number Of Macro Cells
128
Maximum Propagation Delay Time
17.5 ns
Number Of User I/os
64
Number Of Logic Blocks/elements
32
Typical Operating Supply Voltage
5 V
Maximum Operating Frequency
70 MHz
Operating Temperature
0 to 70 °C
Power consumption in the ispLSI 1032E device depends
on two primary factors: the speed at which the device is
operating, and the number of product terms used. Figure
Figure 3. Typical Device Power Consumption vs fmax
I
I
Where:
The I
loads on average exists. These values are for estimates only. Since the value of I
conditions and the program in the device, the actual I
Power Consumption
CC
CC
Maximum GRP Delay vs GLB Loads
(mA) = 15 + (# of PTs * 0.59) + (# of nets * Max freq * 0.0078)
can be estimated for the ispLSI 1032E using the following equation:
# of PTs = Number of Product Terms used in design
# of nets = Number of Signals used in device
Max freq = Highest Clock Frequency to the device (in MHz)
CC
estimate is based on typical conditions (V CC = 5.0V, room temperature) and an assumption of four GLB
350
200
150
100
300
250
0
6.0
3.0
2.0
5.0
1.0
4.0
20
1
Notes: Configuration of eight 16-bit counters
4
40
Typical current at 5V, 25°C
CC
f
should be verified.
8
max (MHz)
60
GLB Load
80
12
16
3 shows the relationship between power and operating
speed.
ispLSI 1032E
100
Specifications ispLSI 1032E
GRP/GLB/1032E
CC
125
is sensitive to operating
32
ispLSI 1032E-70
ispLSI 1032E-80
ispLSI 1032E-90/100
ispLSI 1032E-125
0127/1032E