SI8235AB-C-IM Silicon Laboratories Inc, SI8235AB-C-IM Datasheet - Page 13

• Manufacturer Part Number: SI8235AB-C-IM
• Description: MOSFET DRVR 4A 2-OUT Half Brdg Non-Inv 14-Pin LGA
• Manufacturer: Silicon Laboratories Inc

Specifications of SI8235AB-C-IM

• Package: 14LGA
• Driver Configuration: Non-Inverting
• Peak Output Current: 4 A
• Input Logic Compatibility: TTL
• Number Of Outputs: 2
• Output Resistance: 2.7 Ohm
• Maximum Rise Time: 20 ns
• Maximum Power Dissipation: 1200 mW
• Maximum Supply Current: 2.5(Typ) mA
• Operating Temperature: -40 to 125 °C
• Configuration: Low-Side
• Input Type: Non-Inverting
• Delay Time: 60ns
• Current - Peak: 4A
• Number Of Configurations: 2
• Voltage - Supply: 6.5 V ~ 24 V
• Mounting Type: Surface Mount
• Package / Case: 14-VFLGA
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• High Side Voltage - Max (bootstrap): -
• Lead Free Status / Rohs Status: Supplier Unconfirmed

Table 6. IEC 60747-5-2 Insulation Characteristics*
Table 7. IEC Safety Limiting Values
Maximum Working Insulation
Voltage
Input to Output Test Voltage
Highest Allowable Overvolt-
age (Transient Overvoltage,
t
Pollution Degree (DIN VDE
0110, Table 1)
Insulation Resistance at T
V
*Note: The Si823x is suitable for basic electrical isolation within the safety limit data. Maintenance of the safety data is
Parameter
Case Temperature
Safety Input Current
Device Power
Dissipation
Notes:
TR
IO
1. Maximum value allowed in the event of a failure. Refer to the thermal derating curve in Figures 6 and 7.
2. The Si82xx is tested with V
= 60 sec)
= 500 V
ensured by protective circuits. The Si823x provides a climate classification of 40/125/21.
square wave.
Parameter
2
Symbol
P
T
I
S
S
D
S
,
105 °C/W (NB SOIC-16, 14 LD LGA),
DDI

Symbol
50 °C/W (14 LD LGA w/ Pad)
JA
V
V
V
= 5.5 V, V
IORM
R
T
= 100 °C/W (WB SOIC-16),
PR
TR
J
S
V
= 150 °C, T
DDA
Test Condition
V
1
DDI
= V
(V
Partial Discharge <
DDA
Production Test,
Test Condition
= 5.5 V,
IORM
DDB
t
Method b1
PR
m
= V
A
= 24 V,
5 pC)
= 1 sec,
= 25 °C
, 100%
x 1.875 = V
DDB
Rev. 1.0
= 24 V, T
J
= 150 ºC, C
SOIC-16
SOIC-16
WB
150
1.2
1375
6000
>10
50
WB
891
2
9
L
SOIC-16
= 100 pF, input 2 MHz 50% duty cycle
Characteristic
150
NB SOIC-16
NB
1.2
50
14 LD LGA
1050
4000
>10
560
2
9
LD LGA
150
1.2
50
14
14 LD LGA
w/ Pad
2650
>10
373
700
LGA w/
14 LD
2
Pad
150
100
1.2
Si823x
9
V peak
V peak
V peak
Unit
Unit
mA
°C

W
13