M25P40-VMP6GB NUMONYX, M25P40-VMP6GB Datasheet - Page 41
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M25P40-VMP6GB
Manufacturer Part Number
M25P40-VMP6GB
Description
Flash Mem Serial-SPI 2.5V/3.3V 4M-Bit 512K x 8 8ns 8-Pin VFQFPN EP Tray
Manufacturer
NUMONYX
Datasheet
1.M25P40-VMP6G.pdf
(61 pages)
Specifications of M25P40-VMP6GB
Package
8VFQFPN EP
Cell Type
NOR
Density
4 Mb
Architecture
Sectored
Block Organization
Symmetrical
Typical Operating Supply Voltage
2.5|3.3 V
Sector Size
64KByte x 8
Timing Type
Synchronous
Operating Temperature
-40 to 85 °C
Interface Type
Serial-SPI
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
M25P40-VMP6GB
Manufacturer:
MICRON
Quantity:
14 500
Table 17.
1. 150 nm technology devices are identified by process identification digit "X" in the device marking.
2. When using the Page Program (PP) instruction to program consecutive bytes, optimized timings are
Table 18.
1. Output Hi-Z is defined as the point where data out is no longer driven.
Figure 21. AC measurement I/O waveform
Symbol
Symbol
t
PP
obtained with one sequence including all the bytes versus several sequences of only a few bytes. (1 ≤ n ≤
256)
t
t
t
SE
BE
W
C
—
—
—
—
(2)
L
Load capacitance
Input rise and fall times
Input pulse voltages
Input timing reference voltages
Output timing reference voltages
Alt.
AC measurement conditions
Instruction times, process technology 150 nm
—
—
—
—
Write Status Register cycle time
Page Program cycle time (256 bytes)
Page Program cycle time (n bytes)
Sector Erase cycle time
Bulk Erase cycle time
0.8V CC
0.2V CC
Input Levels
Test conditions specified in
Parameter
Parameter
Table 10
Timing Reference Levels
Input and Output
and
Min.
Min.
0.2V
0.3V
—
—
—
—
—
—
Table 18
(1)
CC
CC
V
0.7V CC
0.5V CC
0.3V CC
AI07455
CC
0.4+n*1/
30
to 0.8V
to 0.7V
256
Typ.
/ 2
1.4
4.5
5
1
(2)
Max.
CC
CC
5
Max.
15
10
5
3
Unit
pF
ns
Unit
V
V
V
ms
ms
41/61
s
s