M25P40-VMP6GB NUMONYX, M25P40-VMP6GB Datasheet - Page 39

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M25P40-VMP6GB

Manufacturer Part Number
M25P40-VMP6GB
Description
Flash Mem Serial-SPI 2.5V/3.3V 4M-Bit 512K x 8 8ns 8-Pin VFQFPN EP Tray
Manufacturer
NUMONYX
Datasheet

Specifications of M25P40-VMP6GB

Package
8VFQFPN EP
Cell Type
NOR
Density
4 Mb
Architecture
Sectored
Block Organization
Symmetrical
Typical Operating Supply Voltage
2.5|3.3 V
Sector Size
64KByte x 8
Timing Type
Synchronous
Operating Temperature
-40 to 85 °C
Interface Type
Serial-SPI

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Table 14.
Symbol
I
I
I
I
I
I
I
V
V
V
I
CC1
CC2
CC3
CC4
CC5
CC6
CC7
V
I
LO
OH
OL
LI
IH
IL
Input leakage current
Output leakage current
Standby current
Deep Power-down current
Operating current (READ)
Operating current (PP)
Operating current (WRSR)
Operating current (SE)
Operating current (BE)
Input low voltage
Input high voltage
Output low voltage
Output high voltage
DC characteristics (device grade 6)
Parameter
25 MHz and 33 MHz, Q = open
Test condition (in addition to
40 MHz, 50 MHz, and 75 MHz,
S = V
S = V
C = 0.1V
C = 0.1V
those in
CC
CC
I
OH
I
OL
, V
, V
Q = open
S = V
S = V
S = V
S = V
= –100 µA
CC
CC
= 1.6 mA
IN
IN
Table
= V
= V
/ 0.9.V
/ 0.9.V
CC
CC
CC
CC
SS
SS
10)
or V
or V
CC
CC
at
at
CC
CC
V
0.7V
CC
Min.
–0.5
–0.2
CC
V
0.3V
CC
Max.
± 2
± 2
0.4
50
10
15
15
15
15
8
4
+0.4
CC
Unit
39/61
mA
mA
mA
mA
mA
mA
µA
µA
µA
µA
V
V
V
V

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