MT48LC8M16A2P-6A:G Micron Technology Inc, MT48LC8M16A2P-6A:G Datasheet - Page 60

• Manufacturer Part Number: MT48LC8M16A2P-6A:G
• Description: DRAM Chip SDRAM 128M-Bit 8Mx16 3.3V 54-Pin TSOP-II Tray
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48LC8M16A2P-6A:G

• Density: 128 Mb
• Maximum Clock Rate: 167 MHz
• Package: 54TSOP-II
• Address Bus Width: 14 Bit
• Operating Supply Voltage: 3.3 V
• Maximum Random Access Time: 5.4 ns
• Operating Temperature: 0 to 70 °C
• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 167MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Package / Case: 54-TSOP II
• Organization: 8Mx16
• Address Bus: 14b
• Access Time (max): 5.4ns
• Operating Supply Voltage (typ): 3.3V
• Package Type: TSOP-II
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 165mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant

Figure 44:
PDF: 09005aef8091e66d/Source: 09005aef8091e625
128MSDRAM_2.fm - Rev. N 1/09 EN
DQML, DQMH
A0–A9, A11
COMMAND
BA0, BA1
DQM /
CKE
A10
CLK
DQ
t CMS
t CKS
t AS
t AS
t AS
Single READ – Without Auto Precharge
ACTIVE
ROW
ROW
BANK
T0
t CMH
t CKH
t AH
t AH
t AH
Notes:
t RCD
t RAS
t RC
t CK
T1
NOP
1. For this example, BL = 1, CL = 2, and the READ burst is followed by a “manual” PRECHARGE.
2. x16: A9 and A11 = “Don’t Care.”
3. PRECHARGE command not allowed or
DISABLE AUTO PRECHARGE
x8: A11 = “Don’t Care.”
t CMS
t CL
COLUMN m
BANK
T2
READ
t CMH
t CH
CAS Latency
2
T3
NOP
t LZ
3
t AC
60
T4
D
NOP
OUT
t OH
t HZ
3
m
t
Micron Technology, Inc., reserves the right to change products or specifications without notice.
SINGLE BANKS
PRECHARGE
RAS would be violated.
ALL BANKS
BANK(S)
T5
t RP
T6
NOP
128Mb: x4, x8, x16 SDRAM
©1999 Micron Technology, Inc. All rights reserved.
ACTIVE
ROW
BANK
T7
ROW
Timing Diagrams
T8
NOP
DON’T CARE
UNDEFINED