MT48LC8M16A2B4-75:G TR Micron Technology Inc, MT48LC8M16A2B4-75:G TR Datasheet - Page 66

• Manufacturer Part Number: MT48LC8M16A2B4-75:G TR
• Description: DRAM Chip SDRAM 128M-Bit 8Mx16 3.3V 54-Pin VFBGA T/R
• Manufacturer: Micron Technology Inc
• Type: SDRAMr

Specifications of MT48LC8M16A2B4-75:G TR

• Density: 128 Mb
• Maximum Clock Rate: 133 MHz
• Package: 54VFBGA
• Address Bus Width: 14 Bit
• Operating Supply Voltage: 3.3 V
• Maximum Random Access Time: 6|5.4 ns
• Operating Temperature: 0 to 70 °C
• Format - Memory: RAM
• Memory Type: SDRAM
• Memory Size: 128M (8Mx16)
• Speed: 133MHz
• Interface: Parallel
• Voltage - Supply: 3 V ~ 3.6 V
• Package / Case: 54-VFBGA
• Organization: 8Mx16
• Address Bus: 14b
• Access Time (max): 6/5.4ns
• Operating Supply Voltage (typ): 3.3V
• Package Type: VFBGA
• Operating Temp Range: 0C to 70C
• Operating Supply Voltage (max): 3.6V
• Operating Supply Voltage (min): 3V
• Supply Current: 150mA
• Pin Count: 54
• Mounting: Surface Mount
• Operating Temperature Classification: Commercial
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant

Figure 50:
DQML, DQMH
PDF: 09005aef8091e66d/Source: 09005aef8091e625
128MSDRAM_2.fm - Rev. N 1/09 EN
COMMAND
A0–A9, A11
BA0, BA1
DQM /
CLK
CKE
A10
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
T0
ROW
ROW
BANK
WRITE – With Auto Precharge
t CMH
t CKH
t AH
t AH
t AH
t RCD
t RAS
t RC
Notes:
t CK
T1
NOP
1. For this example, BL = 4.
2. x16: A9 and A11 = “Don’t Care.”
ENABLE AUTO PRECHARGE
x8: A11 = “Don’t Care.”
t CMS
t CL
t DS
COLUMN m 2
WRITE
T2
D
BANK
IN
t CMH
t CH
t DH
m
t DS
D
IN
T3
NOP
m + 1
t DH
t DS
D
T4
IN
NOP
m + 2
t DH
66
t DS
D
IN
T5
NOP
m + 3
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t DH
t WR
T6
NOP
128Mb: x4, x8, x16 SDRAM
T7
NOP
©1999 Micron Technology, Inc. All rights reserved.
Timing Diagrams
t RP
NOP
T8
ACTIVE
ROW
ROW
BANK
T9
DON’T CARE