MT48H4M32LFB5-75 IT:K Micron Technology Inc, MT48H4M32LFB5-75 IT:K Datasheet - Page 68

• Manufacturer Part Number: MT48H4M32LFB5-75 IT:K
• Description: DRAM Chip Mobile SDRAM 128M-Bit 4Mx32 1.8V 90-Pin VFBGA Tray
• Manufacturer: Micron Technology Inc
• Type: Mobile SDRAMr

Specifications of MT48H4M32LFB5-75 IT:K

• Package: 90VFBGA
• Density: 128 Mb
• Address Bus Width: 14 Bit
• Operating Supply Voltage: 1.8 V
• Maximum Clock Rate: 133 MHz
• Maximum Random Access Time: 8|5.4 ns
• Operating Temperature: -40 to 85 °C

Figure 38: READ Without Auto Precharge
PDF: 09005aef832ff1ea
128mb_mobile_sdram_y35M.pdf - Rev. G 10/09 EN
Command
BA0, BA1
Address
DQM
CKE
CLK
A10
DQ
t CMS
t CKS
t AS
t AS
t AS
ACTIVE
T0
Bank
Row
Row
t CMH
t AH
t AH
t AH
t CKH
t RCD
t RAS
t RC
t CK
Note:
T1
NOP
1. For this example, BL = 4, CL = 2, and the READ burst is followed by a manual PRECHARGE.
Disable auto precharge
t CL
t CMS
Column m
T2
Bank
READ
t CMH
t CH
CL = 2
T3
NOP
t LZ
t AC
128Mb: 8 Meg x 16, 4 Meg x 32 Mobile SDRAM
68
T4
NOP
D
OUT
t OH
t AC
Micron Technology, Inc. reserves the right to change products or specifications without notice.
T5
D
NOP
OUT
t OH
t AC
PRECHARGE
Single bank
All banks
Bank(s)
T6
D
OUT
t OH
t RP
PRECHARGE Operation
t AC
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T7
NOP
D
OUT
t OH
t HZ
Don’t Care
T8
ACTIVE
Row
Bank
Row
Undefined