MT46V16M16P-5B:K Micron Technology Inc, MT46V16M16P-5B:K Datasheet - Page 69
![DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.6V 66-Pin TSOP Tray](/photos/31/34/313420/66pin_tsop_sml.jpg)
MT46V16M16P-5B:K
Manufacturer Part Number
MT46V16M16P-5B:K
Description
DRAM Chip DDR SDRAM 256M-Bit 16Mx16 2.6V 66-Pin TSOP Tray
Manufacturer
Micron Technology Inc
Type
DDR SDRAMr
Datasheet
1.MT46V16M16P-5BK.pdf
(93 pages)
Specifications of MT46V16M16P-5B:K
Density
256 Mb
Maximum Clock Rate
400 MHz
Package
66TSOP
Address Bus Width
15 Bit
Operating Supply Voltage
2.6 V
Maximum Random Access Time
0.7 ns
Operating Temperature
0 to 70 °C
Organization
16Mx16
Address Bus
15b
Access Time (max)
700ps
Operating Supply Voltage (typ)
2.6V
Package Type
TSOP
Operating Temp Range
0C to 70C
Operating Supply Voltage (max)
2.7V
Operating Supply Voltage (min)
2.5V
Supply Current
260mA
Pin Count
66
Mounting
Surface Mount
Operating Temperature Classification
Commercial
Lead Free Status / RoHS Status
Compliant
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
MT46V16M16P-5B:K
Manufacturer:
MICRON
Quantity:
6 589
Company:
Part Number:
MT46V16M16P-5B:K
Manufacturer:
MICRON
Quantity:
20 000
Company:
Part Number:
MT46V16M16P-5B:K
Manufacturer:
MICRON
Quantity:
7 580
Figure 32:
PDF: 09005aef80768abb/Source: 09005aef82a95a3a
DDR_x4x8x16_Core2.fm - 256Mb DDR: Rev. O, Core DDR: Rev. B 1/09 EN
Command
Command
Command
Address
Address
Address
READ-to-WRITE
DQS
DQS
DQS
CK#
CK#
CK#
DM
DM
DM
DQ
DQ
DQ
CK
CK
CK
Notes:
Bank a,
READ
Bank,
READ
Bank,
READ
Col n
Col n
Col n
T0
T0
T0
1. Page remains open.
2. DO n = data-out from column n; DI b = data-in from column b.
3. BL = 4 (applies for bursts of 8 as well; if BL = 2, the BURST command shown can be NOP).
4. One subsequent element of data-out appears in the programmed order following DO n.
5. Data-in elements are applied following DI b in the programmed order.
6. Shown with nominal
CL = 2
BST
BST
BST
T1
T1
T1
CL = 2.5
1
1
1
CL = 3
t
AC,
NOP
NOP
NOP
T2
T2
T2
t
DQSCK, and
DO
n
67
T2n
T2n
DO
n
WRITE
NOP
Bank,
Col b
T3
T3
T3
NOP
Micron Technology, Inc., reserves the right to change products or specifications without notice.
t
(NOM)
t
DQSS
DQSQ.
DO
n
T3n
T3n
256Mb: x4, x8, x16 DDR SDRAM
Transitioning Data
WRITE
Bank,
WRITE
Col b
T4
T4
T4
NOP
DI
b
t
(NOM)
DQSS
t
(NOM)
DQSS
T4n
©2003 Micron Technology, Inc. All rights reserved.
T5
T5
T5
DI
NOP
NOP
DI
NOP
b
b
Don’t Care
T5n
T5n
T5n
Operations