EMD4T2R Rohm Semiconductor, EMD4T2R Datasheet - Page 4

• Manufacturer Part Number: EMD4T2R
• Description: TRANS COMPLEX DGTL PNP/NPN EMT6
• Manufacturer: Rohm Semiconductor

Specifications of EMD4T2R

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 47K, 10K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 68 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA / 300mV @ 250µA, 5mA
• Current - Collector Cutoff (max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: EMT6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: EMD4T2RTR

Transistors
−500m
−200m
−100m
−50m
−20m
−10m
−5m
−2m
−1m
−100µ
−1
Fig.8 Output voltage vs. output
−200µ
OUTPUT CURRENT : I
−500µ
current
−1m
−2m
Ta=100°C
−40°C
25°C
−5m
−10m
O
−20m
(A)
l
O
/l
I
=20
−50m
−100m
EMD4 / UMD4N
Rev.B
4/4