EMD4T2R Rohm Semiconductor, EMD4T2R Datasheet - Page 2

• Manufacturer Part Number: EMD4T2R
• Description: TRANS COMPLEX DGTL PNP/NPN EMT6
• Manufacturer: Rohm Semiconductor

Specifications of EMD4T2R

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 47K, 10K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 68 @ 5mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 500µA, 10mA / 300mV @ 250µA, 5mA
• Current - Collector Cutoff (max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: EMT6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: EMD4T2RTR

Transistors
DTr 1
DTr 2
∗ Transition frequency of the device
∗ Transition frequency of the device
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
Absolute maximum ratings (Ta = 25°C)
Electrical characteristics (Ta = 25°C)
Parameter
Parameter
Parameter
Symbol
I
C(Max.)
Tstg
V
V
Pd
I
Tj
CC
O
IN
Symbol
Symbol
V
R
V
R
V
V
V
V
I
I
O(off)
O(off)
R
R
O(on)
G
2
O(on)
G
2
I(off)
I(on)
f
I(off)
I(on)
f
I
I
/R
/R
T
T
I
I
1
1
I
I
1
1
DTr1(DTC144E)
150(TOTAL)
Min.
32.9
Min.
−1.4
0.8
3.7
−10 to +40
68
68
−
3
−
−
−
−
−
−
−
−
7
−
100
50
30
Typ.
Typ.
−0.1
250
250
0.1
4.7
47
10
−
−
−
−
−
1
−
−
−
−
−
−55 to +150
−0.88
Max.
Max.
0.18
61.1
−0.3
−0.3
−0.5
0.5
0.3
0.5
1.2
5.7
13
−
−
−
−
−
−
Limits
150
MHz
MHz
Unit
Unit
mA
mA
µA
kΩ
µA
kΩ
V
V
−
−
V
V
−
−
DTr2(DTA114Y)
120(1ELEMENT)
−40 to +6
V
V
I
V
V
V
V
V
V
I
V
V
V
V
O
O
CC
O
I
CC
O
CE
CC
O
I
CC
O
CE
−100
/I
/I
=5V
= −5V
−50
−70
=0.3V, I
=5V, I
= −0.3V, I
= −5V, I
I
I
=10mA/0.5mA
=10V, I
= −5mA / −0.25mA
= −10V, I
=5V, I
=50V, V
= −5V, I
= −50V, V
O
O
=5mA
O
O
=100µA
E
Conditions
Conditions
O
=2mA
I
= −5mA
=−5mA, f=100MHz
=0V
O
= −100µA
E
= −1mA
I
=5mA, f=100MHz
=0V
−
−
−
−
Unit
mW
mA
°C
°C
V
V
EMD4 / UMD4N
∗
∗
Rev.B
2/4