EMD6T2R Rohm Semiconductor, EMD6T2R Datasheet - Page 2

• Manufacturer Part Number: EMD6T2R
• Description: TRANS PNP/NPN 50V 100MA EMT6
• Manufacturer: Rohm Semiconductor

Specifications of EMD6T2R

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 1mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Frequency - Transition: 250MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: EMT6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Resistor - Emitter Base (r2) (ohms): -
• Other names: EMD6T2R; EMD6T2RTR

Transistors
∗
DTr
DTr
Type
EMD6
UMD6N
IMD6A
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Transition frequency
Input resistance
Electrical characteristics (Ta = 25°C)
Packaging specifications
Electrical characteristic curves
Transition frequency of the transistor
1
2
(NPN)
(PNP)
Parameter
Package
Code
Basic ordering
unit (pieces)
500
100
200
500
200
100
Fig.1 DC current gain vs. collector
50
20
10
1k
50
20
10
Fig.3 DC current gain vs. collector
1k
100µ 200µ 500µ 1m
−100µ
5
2
1
5
2
1
−200µ
current
COLLECTOR CURRENT : I
COLLECTOR CURRENT : I
current
−500µ
Ta=100˚C
−1m
−40˚C
25˚C
Ta=100˚C
−2m
8000
2m
T2R
Symbol
−40˚C
BV
BV
BV
V
25˚C
I
I
5m 10m 20m 50m100m
−5m
h
CE (sat)
R
CBO
EBO
f
FE
CBO
CEO
EBO
T
1
−10m
−20m
C
C
V
Min.
3.29
V
100
Taping
3000
(A)
(A)
50
50
CE
CE
5
−
−
−
TR
−
−50m−100m
=−5V
= 5V
Typ. Max. Unit
250
250
4.7
−
−
−
−
−
−
T108
3000
6.11
600
0.5
0.5
0.3
−
−
−
−
MHz
kΩ
µA
µA
V
V
V
V
−
−500m
−200m
−100m
−50m
−20m
−10m
500m
200m
100m
Fig.4 Collector-emitter saturation
−5m
−2m
−1m
50m
20m
10m
Fig.2
−100µ
5m
2m
1m
−1
I
I
I
V
V
I
V
V
100 µ 200 µ 500 µ 1m
C
C
E
C
1
= 50µA
= 1mA
= 50µA
CB
EB
/I
CE
CE
B
−200µ
= 50V
= 4V
= 5V, I
= 10V, I
= 5mA/0.25mA
voltage vs. collector current
COLLECTOR CURRENT : I
COLLECTOR CURRENT : I
Collector-emitter saturation
voltage vs. collector current
−500µ
EMD6 / UMD6N / IMD6A
C
Ta=100˚C
−1m
= 1mA
E
= −5mA, f = 100MHz
Ta=100˚C
−40˚C
Conditions
25˚C
−2m
2m
−40˚C
25˚C
−5m
5m 10m 20m
−
−10m
−20m
C
C
l
l
C
(A)
C
(A)
/l
/l
B
−50m−100m
B
=20
=20
50m 100m
Rev.A
∗
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