EMD6T2R Rohm Semiconductor, EMD6T2R Datasheet
EMD6T2R
Manufacturer Part Number
EMD6T2R
Description
TRANS PNP/NPN 50V 100MA EMT6
Manufacturer
Rohm Semiconductor
Datasheet
1.UMD6NTR.pdf
(3 pages)
Specifications of EMD6T2R
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
4.7K
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 1mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 250µA, 5mA
Frequency - Transition
250MHz
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
EMT6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Resistor - Emitter Base (r2) (ohms)
-
Other names
EMD6T2R
EMD6T2RTR
EMD6T2RTR
Available stocks
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Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
EMD6T2R
Manufacturer:
ROHM
Quantity:
8 000
Company:
Part Number:
EMD6T2R
Manufacturer:
ROHM
Quantity:
41 000
Part Number:
EMD6T2R
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Transistors
General purpose
(dual digital transistors)
EMD6 / UMD6N / IMD6A
1) Both the DTA143T chip and DTC143T chip in an EMT
2) Mounting possible with EMT3 or UMT3 or SMT3
3) Transistor elements are independent, eliminating
4) Mounting cost and area can be cut in half.
A PNP and NPN digital transistor
(each with a single built in resistor)
The following characteristics apply to both the DTr
DTr
type have been omitted.
∗
∗
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Collector
power
dissipation
Junction temperature
Storage temperature
1 120mW per element must not be exceeded.
2 200mW per element must not be exceeded.
Features
Structure
Equivalent circuit
Absolute maximum ratings (Ta = 25°C)
or UMT or SMT package.
automatic mounting machines.
interference.
EMD6 / UMD6N
2
R
, however, the “ −” sign on DTr
1
=4.7kΩ
Parameter
DTr
EMD6, UMD6N
IMD6A
2
(3)
(4)
R
1
(2)
R
(5)
1
DTr
(1)
(6)
1
Symbol
IMD6A
DTr
V
V
V
Tstg
P
Tj
CBO
CEO
EBO
I
C
2
C
(4)
(3)
R
1
(5)
R
(2)
150 (TOTAL)
300 (TOTAL)
1
−55∼+150
2
DTr
(6)
(1)
Limits
values for the PNP
100
150
R
1
50
50
1
5
=4.7kΩ
Unit
mW
mA
˚C
˚C
V
V
V
1
∗
∗
and
1
2
External dimensions (Units : mm)
EMD6
ROHM : EMT6
UMD6N
ROHM : UMT6
EIAJ : SC-88
ROHM : SMT6
EIAJ : SC-74
IMD6A
EMD6 / UMD6N / IMD6A
0.3to0.6
0.1Min.
Abbreviated symbol : D6
Abbreviated symbol : D6
Abbreviated symbol : D6
( 4 )
( 5 )
( 6 )
1.6
2.8
1.25
1.2
1.6
2.1
Each lead has same dimensions
Each lead has same dimensions
( 3 )
( 2 )
( 1 )
Each lead has same dimensions
Rev.A
1/2
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EMD6T2R Summary of contents
Page 1
Transistors General purpose (dual digital transistors) EMD6 / UMD6N / IMD6A Features 1) Both the DTA143T chip and DTC143T chip in an EMT or UMT or SMT package. 2) Mounting possible with EMT3 or UMT3 or SMT3 automatic mounting machines. ...
Page 2
Transistors Electrical characteristics (Ta = 25°C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Transition frequency Input resistance ∗ Transition frequency of the transistor Packaging ...
Page 3
Appendix No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the product ...