EMD22T2R Rohm Semiconductor, EMD22T2R Datasheet - Page 2

• Manufacturer Part Number: EMD22T2R
• Description: TRANS PRE-BIASED 50V 100MA EMT6
• Manufacturer: Rohm Semiconductor

Specifications of EMD22T2R

• Transistor Type: 1 NPN, 1 PNP - Pre-Biased (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Resistor - Base (r1) (ohms): 4.7K
• Resistor - Emitter Base (r2) (ohms): 47K
• Dc Current Gain (hfe) (min) @ Ic, Vce: 80 @ 10mA, 5V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 250µA, 5mA
• Current - Collector Cutoff (max): 500nA
• Frequency - Transition: 250MHz
• Power - Max: 150mW
• Mounting Type: Surface Mount
• Package / Case: EMT6
• Emt6 Pnp/pnp: Module Configuration
• Transistor Polarity: NPN / PNP
• Collector Emitter Voltage V(br)ceo: 50V
• Gain Bandwidth Ft Typ: 250MHz
• Power Dissipation Pd: 150mW
• Dc Collector Current: 100mA
• Operating: RoHS Compliant
• Module Configuration: Dual
• Dc Current Gain Hfe: 80
• Rohs Compliant: Yes
• Other names: Q2730364

DTr 1
∗
DTr 2
∗
○
EMD22 / UMD22N
c
www.rohm.com
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Input voltage
Output voltage
Input current
Output current
DC current gain
Input resistance
Resistance ratio
Transition frequency
Transition frequency of the device
Transition frequency of the device
Electrical characteristics (Ta=25°C)
2009 ROHM Co., Ltd. All rights reserved.
Parameter
Parameter
Symbol
Symbol
V
V
V
V
I
R
V
V
I
R
O (off)
O (off)
O (on)
R
O (on)
R
I (off)
I (on)
G
2
I (off)
I (on)
G
2
f
f
I
I
/ R
T
/ R
T
I
I
1
1
I
I
1
1
∗
∗
Min.
3.29
Min.
−1.3
3.29
1.3
80
80
−
−
−
−
8
−
−
−
−
−
8
−
Typ. Max. Unit
Typ. Max. Unit
−0.1
250
250
0.1
4.7
4.7
10
10
−
−
−
−
−
−
−
−
−
−
6.11
−0.5
−0.3
−1.8
−0.5
6.11
0.5
0.3
1.8
0.5
12
12
−
−
−
−
−
−
MHz
MHz
mA
mA
µA
kΩ
µA
kΩ
V
V
V
V
−
−
−
−
V
V
I
V
V
V
V
V
V
I
V
V
V
V
O
O
CC
O
I
CC
O
CE
CC
O
I
CC
O
CE
/ I
=5 V
/ I
=−5 V
= 0.3V, I
= 5V, I
=− 0.3V, I
=− 5V, I
I
I
2/3
= 5mA/0.25mA
= 10V, I
= 5V, I
= 50V, V
=− 5mA/ − 0.25mA
=− 10V, I
=− 5V, I
=− 50V, V
O
O
= 10mA
O
O
= 100µA
E
O
= 5mA
I
=
=− 10mA
= 0V
O
Conditions
Conditions
=− 100µA
E
−
=− 5mA
I
= 5mA, f = 100MHz
= 0V
5mA, f = 100MHz
−
−
−
−
2009.06 - Rev.B
Data Sheet