EMD22T2R Rohm Semiconductor, EMD22T2R Datasheet
EMD22T2R
Manufacturer Part Number
EMD22T2R
Description
TRANS PRE-BIASED 50V 100MA EMT6
Manufacturer
Rohm Semiconductor
Datasheet
1.EMD22T2R.pdf
(4 pages)
Specifications of EMD22T2R
Transistor Type
1 NPN, 1 PNP - Pre-Biased (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Resistor - Base (r1) (ohms)
4.7K
Resistor - Emitter Base (r2) (ohms)
47K
Dc Current Gain (hfe) (min) @ Ic, Vce
80 @ 10mA, 5V
Vce Saturation (max) @ Ib, Ic
300mV @ 250µA, 5mA
Current - Collector Cutoff (max)
500nA
Frequency - Transition
250MHz
Power - Max
150mW
Mounting Type
Surface Mount
Package / Case
EMT6
Emt6 Pnp/pnp
Module Configuration
Transistor Polarity
NPN / PNP
Collector Emitter Voltage V(br)ceo
50V
Gain Bandwidth Ft Typ
250MHz
Power Dissipation Pd
150mW
Dc Collector Current
100mA
Operating
RoHS Compliant
Module Configuration
Dual
Dc Current Gain Hfe
80
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Other names
Q2730364
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Part Number:
EMD22T2R
Manufacturer:
ROHM/罗姆
Quantity:
20 000
General purpose (dual digital transistors)
1) Both the DTA143Z chip and DTC143Z chip in an EMT or UMT package.
2) Mounting possible with EMT3 or UMT3 automatic mounting machines.
3) Transistor elements are independent, eliminating
4) Mounting cost and area can be cut in half.
A PNP and NPN digital transistor
(Each with a single built in resistor)
DTr 1
DTr 2
∗
○
∗
c
Type
EMD22
UMD22N
www.rohm.com
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
Supply voltage
Input voltage
Output current
Power dissipation
Junction temperature
Storage temperature
120mW per element must not be exceeded
120mW per element must not be exceeded
Features
Structure
Packaging specifications
Absolute maximum ratings (Ta=25°C)
interference.
EMD22 / UMD22N
2009 ROHM Co., Ltd. All rights reserved.
Parameter
Parameter
Package
Code
Basic ordering
unit (pieces)
∗
Symbol
Symbol
I
I
C (MAX)
C (MAX)
Tstg
Tstg
V
V
V
V
Pd
Pd
I
Tj
I
Tj
CC
CC
O
O
IN
IN
8000
∗
T2R
Taping
3000
−55 to +150
−55 to +150
TR
−5 to +30
−30 to +5
Limits
Limits
−100
−100
−50
150
150
100
100
150
150
50
Unit
mW
Unit
mW
mA
mA
°C
°C
°C
°C
V
V
V
V
1/3
Dimensions (Unit : mm)
Inner circuit
R
R
EMD22 / UMD22N
EMD22
ROHM : EMT6
1
2
UMD22N
=4.7kΩ
=47kΩ
ROHM : UMT6
EIAJ : SC-88
Abbreviated symbol : D22
0.1Min.
Abbreviated symbol : D22
DTr2
(4)
(5)
(6)
(3)
(4)
1.25
1.2
1.6
2.1
R2
Each lead has same dimensions
Each lead has same dimensions
(3)
(2)
(1)
R1
(2)
(5)
R1
2009.06 - Rev.B
R2
(1)
DTr1
(6)
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EMD22T2R Summary of contents
Page 1
General purpose (dual digital transistors) EMD22 / UMD22N Features 1) Both the DTA143Z chip and DTC143Z chip in an EMT or UMT package. 2) Mounting possible with EMT3 or UMT3 automatic mounting machines. 3) Transistor elements are independent, eliminating interference. ...
Page 2
EMD22 / UMD22N Electrical characteristics (Ta=25°C) DTr 1 Parameter Symbol V I (off) Input voltage V I (on) Output voltage V O (on) Input current I I Output current I O (off) DC current gain G I Input resistance R ...
Page 3
EMD22 / UMD22N Electrical characteristic curves DTr 1 100 =0. Ta=−40°C 25°C 2 100°C 1 500m 200m 100m 100µ 200µ 500µ 10m 20m 50m 100m (A) OUTPUT CURRENT : I O ...
Page 4
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...