BC 847PN B6327 Infineon Technologies, BC 847PN B6327 Datasheet

TRANSISTOR NPN AF 45V SOT-363

BC 847PN B6327

Manufacturer Part Number
BC 847PN B6327
Description
TRANSISTOR NPN AF 45V SOT-363
Manufacturer
Infineon Technologies
Datasheet

Specifications of BC 847PN B6327

Transistor Type
NPN, PNP
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
650mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 2mA, 5V
Power - Max
250mW
Frequency - Transition
250MHz
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
BC847PNB6327XT
SP000056358
NPN/PNP Silicon AF Transistor Arrays
BC846PN
BC846UPN
BC847PN
Type
BC846PN
BC846UPN
BC847PN
1
Pb-containing package may be available upon special request
For AF input stage and driver applications
High current gain
Low collector-emitter saturation voltage
Two (galvanic) internal isolated NPN/PNP
Pb-free (RoHS compliant) package
Qualified according AEC Q101
transistor in one package
TR1
C1
E1
6
1
B2
B1
5
2
E2
C2
4
3
TR2
EHA07177
Marking
1Os
1Os
1Ps
1)
1=E1
1=E1
1=E1
2=B1
2=B1
2=B1
1
Pin Configuration
3=C2
3=C2
3=C2
4=E2
4=E2
4=E2
BC846PN/UPN_BC847PN
5=B2
5=B2
5=B2
6=C1
6=C1
6=C1
Package
SOT363
SC74
SOT363
2007-04-20

Related parts for BC 847PN B6327

BC 847PN B6327 Summary of contents

Page 1

NPN/PNP Silicon AF Transistor Arrays For AF input stage and driver applications High current gain Low collector-emitter saturation voltage Two (galvanic) internal isolated NPN/PNP transistor in one package Pb-free (RoHS compliant) package Qualified according AEC Q101 BC846PN BC846UPN BC847PN C1 ...

Page 2

Maximum Ratings Parameter Collector-emitter voltage BC846PN/UPN BC847PN Collector-emitter voltage BC846PN/UPN BC847PN Collector-base voltage BC846PN/UPN BC847PN Emitter-base voltage Collector current Peak collector current Total power dissipation- T 115°C, BC846PN, BC847PN S T 118°C, BC846UPN S Junction temperature Storage temperature Thermal Resistance ...

Page 3

Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA BC846PN/UPN mA BC847PN C B Collector-base breakdown voltage µA, I ...

Page 4

Electrical Characteristics at T Parameter AC Characteristics Transition frequency mA 100 MHz C CE Collector-base capacitance MHz CB Emitter-base capacitance V = 0.5 V, ...

Page 5

DC current gain 100 - Base-emitter ...

Page 6

Transition frequency 100 MHz MHz Total power dissipation P BC846PN, BC847PN 300 mW 250 ...

Page 7

Permissible Pulse Load R BC846PN, BC847PN 0.5 0.2 0.1 0.05 0. 0.01 0.005 Permissible Puls Load R thJS ...

Page 8

Package Outline 2.9 (2.25 Pin 1 marking Foot Print Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Pin 1 marking Laser marking Standard Packing Reel ø180 mm = 3.000 Pieces/Reel ...

Page 9

Package Outline Pin 1 marking Foot Print Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Pin 1 marking Laser marking Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = ...

Page 10

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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