MBT3946DW1T1 ON Semiconductor, MBT3946DW1T1 Datasheet - Page 7

• Manufacturer Part Number: MBT3946DW1T1
• Description: TRANS DUAL GP 200MA 40V SOT363
• Manufacturer: ON Semiconductor

Specifications of MBT3946DW1T1

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 50mA / 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 150mW
• Frequency - Transition: 300MHz, 250MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Dc: 0534
• Lead Free Status / RoHS Status: Contains lead / RoHS non-compliant
• Current - Collector Cutoff (max): -
• Other names: MBT3946DW1T1OSCT

+0.5 V
10.6 V
7.0
5.0
3.0
2.0
1.0
500
300
200
100
10
70
50
30
20
10
7
5
0.1
1.0
0.2 0.3 0.5 0.7
2.0 3.0
< 1 ns
Figure 19. Delay and Rise Time
DUTY CYCLE = 2%
Figure 23. Turn −On Time
Figure 21. Capacitance
Equivalent Test Circuit
I
C
300 ns
, COLLECTOR CURRENT (mA)
5.0 7.0
REVERSE BIAS (VOLTS)
(PNP)
1.0
C
10
C
obo
ibo
10 k
2.0 3.0
t
d
@ V
20
(PNP)
TYPICAL TRANSIENT CHARACTERISTICS
OB
5.0 7.0 10
= 0 V
30
t
r
* Total shunt capacitance of test jig and connectors
@ V
3 V
50
CC
= 3.0 V
70
275
I
C
C
/I
100
s
20 30 40
B
< 4 pF*
http://onsemi.com
= 10
15 V
2.0 V
40 V
200
(PNP)
DUTY CYCLE = 2%
7
10 < t
T
T
J
J
= 25°C
= 125°C
5000
3000
2000
1000
1
500
300
200
100
700
500
300
200
100
70
50
30
20
10
< 500 ms
70
50
7
5
1.0
1.0
+9.1 V
0
V
I
C
CC
/I
B
2.0 3.0
Q
2.0 3.0
= 40 V
= 10
T
t
1
Figure 20. Storage and Fall Time
I
I
C
Figure 22. Charge Data
C
10.9 V
, COLLECTOR CURRENT (mA)
5.0 7.0
, COLLECTOR CURRENT (mA)
Figure 24. Fall Time
5.0 7.0 10
< 1 ns
Equivalent Test Circuit
(PNP)
10
I
1N916
C
10 k
/I
B
= 10
20
20
I
C
/I
B
30
(PNP)
= 20
30
50
50 70 100
Q
3 V
A
V
I
70
B1
CC
= I
100
= 40 V
275
B2
C
s
< 4 pF*
200
200