NST847BPDP6T5G ON Semiconductor, NST847BPDP6T5G Datasheet - Page 3

• Manufacturer Part Number: NST847BPDP6T5G
• Description: TRANSISTOR DUAL COMPL GP SOT-963
• Manufacturer: ON Semiconductor

Specifications of NST847BPDP6T5G

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 5mA, 100mA / 700mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V / 220 @ 2mA, 5V
• Power - Max: 350mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-963
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

0.08
0.04
0.02
0.18
0.16
0.14
0.12
0.10
0.06
0.0001
Figure 1. Collector Emitter Saturation Voltage vs.
I
C
/I
B
= 10
I
C
, COLLECTOR CURRENT (A)
Collector Current
0.001
25°C
V
CE(sat)
0.01
= 150°C
−55°C
NPN TRANSISTOR
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0.1
3
600
500
400
300
200
100
0.0001
0
Figure 2. DC Current Gain vs. Collector Current
150°C (5.0 V)
150°C (1.0 V)
−55°C (5.0 V)
−55°C (1.0 V)
25°C (5.0 V)
25°C (1.0 V)
I
C
, COLLECTOR CURRENT (A)
0.001
0.01
0.1