NST847BPDP6T5G ON Semiconductor, NST847BPDP6T5G Datasheet

TRANSISTOR DUAL COMPL GP SOT-963

NST847BPDP6T5G

Manufacturer Part Number
NST847BPDP6T5G
Description
TRANSISTOR DUAL COMPL GP SOT-963
Manufacturer
ON Semiconductor
Datasheet
1.NST847BPDP6T5G.pdf (7 pages)

Specifications of NST847BPDP6T5G

Transistor Type
NPN, PNP
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
600mV @ 5mA, 100mA / 700mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 2mA, 5V / 220 @ 2mA, 5V
Power - Max
350mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Package / Case
SOT-963
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
NST847BPDP6T5G
Manufacturer:
ON Semiconductor
Quantity:
6 250
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
NST847BPDP6T5G
Manufacturer:
ON
Quantity:
30 000
NST847BPDP6T5G
Dual Complementary
General Purpose Transistor
SOT−23/SOT−323/SOT−563 three−leaded device. It is designed for
general purpose amplifier applications and is housed in the SOT−963
six−leaded surface mount package. By putting two discrete devices in
one package, this device is ideal for low−power surface mount
applications where board space is at a premium.
Features
•
•
•
•
•
•
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR−4 @ 100 mm
2. FR−4 @ 500 mm
3. Dual heated values assume total power is sum of two equally powered channels
© Semiconductor Components Industries, LLC, 2008
May, 2008 − Rev. 0
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector −Emitter Voltage
Collector −Base Voltage
Emitter−Base Voltage
Collector Current − Continuous
Electrostatic Discharge
Total Device Dissipation T
Derate above 25°C (Note 1)
Thermal Resistance, Junction-to-Ambient
(Note 1)
Total Device Dissipation T
Derate above 25°C (Note 2)
Thermal Resistance, Junction-to-Ambient
(Note 2)
Total Device Dissipation T
Derate above 25°C (Note 1)
Thermal Resistance, Junction-to-Ambient
(Note 1)
Total Device Dissipation T
Derate above 25°C (Note 2)
Thermal Resistance, Junction-to-Ambient
(Note 2)
Junction and Storage Temperature Range
The NST847BPDP6T5G device is a spin−off of our popular
Characteristic (Dual Heated) (Note 3)
h
Low V
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
This is a Pb−Free Device
FE
Characteristic (Single Heated)
, 200−450
CE(sat)
, ≤ 0.3 V
Rating
2
2
, 1 oz. copper traces, still air.
, 1 oz. copper traces, still air.
A
A
A
A
= 25°C
= 25°C
= 25°C
= 25°C
HBM
MM
Symbol
Symbol
Symbol
T
Class
V
V
V
ESD
R
R
R
R
J
P
P
P
P
, T
CEO
CBO
EBO
I
qJA
qJA
qJA
qJA
C
D
D
D
D
stg
−55 to
Value
+150
Max
Max
100
240
520
280
446
350
357
420
297
6.0
1.9
2.2
2.8
3.4
45
50
2
B
mW/°C
mW/°C
mW/°C
mW/°C
1
mAdc
°C/W
°C/W
°C/W
°C/W
Unit
Unit
Unit
Vdc
Vdc
Vdc
mW
mW
mW
mW
°C
†For information on tape and reel specifications,
NST847BPDP6T5G SOT−963
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
(Note: Microdot may be in either location)
Device
Q
(3)
(4)
1
ORDERING INFORMATION
MARKING DIAGRAM
A
M
G
http://onsemi.com
NST847BPDP6T5G*
= Device Code
= Date Code
= Pb−Free Package
CASE 527AD
1
6
SOT−963
PLASTIC
*Q1 PNP
(Pb−Free)
Package
5
Q2 NPN
(5)
A M G
4
Publication Order Number:
(2)
G
1
2
3
8000/Tape & Reel
NST847BPDP6/D
Shipping
(1)
(6)
Q
2
†

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NST847BPDP6T5G Summary of contents

Page 1

... NST847BPDP6T5G Dual Complementary General Purpose Transistor The NST847BPDP6T5G device is a spin−off of our popular SOT−23/SOT−323/SOT−563 three−leaded device designed for general purpose amplifier applications and is housed in the SOT−963 six−leaded surface mount package. By putting two discrete devices in one package, this device is ideal for low− ...

Page 2

ELECTRICAL CHARACTERISTICS Characteristic OFF CHARACTERISTICS Collector −Emitter Breakdown Voltage (I = 1.0 mA −1.0 mA Collector −Base Breakdown Voltage ( mA ...

Page 3

0.16 0.14 0.12 V CE(sat) 0.10 0.08 25°C 0.06 0.04 0.02 0.0001 0.001 I , COLLECTOR CURRENT (A) C Figure 1. Collector Emitter Saturation Voltage vs. Collector Current NPN TRANSISTOR 600 150°C (5.0 ...

Page 4

0.9 −55°C 0.8 0.7 25°C 0.6 0.5 0.4 150°C 0.3 0.0001 0.001 0. COLLECTOR CURRENT (A) C Figure 3. Base Emitter Saturation Voltage vs. Collector Current 1.0 0.9 0.8 0.7 50 ...

Page 5

0.16 0.14 V CE(sat) 0.12 0.10 25°C 0.08 0.06 0.04 0.02 0.0001 0.001 I , COLLECTOR CURRENT (A) C Figure 8. Collector Emitter Saturation Voltage vs. Collector Current PNP TRANSISTOR 800 150°C (5.0 ...

Page 6

0.9 −55°C 0.8 0.7 25°C 0.6 0.5 0.4 150°C 0.3 0.0001 0.001 0. COLLECTOR CURRENT (A) C Figure 10. Base Emitter Saturation Voltage vs. Collector Current 1.0 0.9 0.8 0.7 50 ...

Page 7

... C A *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “ ...

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