BC847CDXV6T1G ON Semiconductor, BC847CDXV6T1G Datasheet - Page 4

• Manufacturer Part Number: BC847CDXV6T1G
• Description: TRANS NPN DUAL 45V SOT-563
• Manufacturer: ON Semiconductor

Specifications of BC847CDXV6T1G

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 420 @ 2mA, 5V
• Power - Max: 500mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: BC847CDXV6T1G; BC847CDXV6T1GOSTR

2.0
1.6
1.2
0.8
0.4
7.0
5.0
3.0
2.0
1.0
10
0
0.02
0.4 0.6
Figure 5. Collector Saturation Region
10 mA
I
0.8
C
=
1.0
20 mA
I
V
C
Figure 7. Capacitances
R
0.1
=
, REVERSE VOLTAGE (VOLTS)
I
B
2.0
, BASE CURRENT (mA)
I
C
C
= 50 mA
ib
0.001
0.01
4.0
0.1
1
C
ob
6.0
0.1
1.0
T
8.0
A
I
C
= 25°C
10
V
= 100 mA
CE
I
TYPICAL CHARACTERISTICS
C
= 200 mA
, COLLECTOR EMITTER VOLTAGE (V)
Figure 9. Safe Operating Area
T
A
20
= 25°C
http://onsemi.com
1
10
20
40
Thermal Limit
4
1 S
100 mS
2.4
2.8
400
300
200
100
1.0
1.2
1.6
2.0
80
60
40
30
20
0.2
0.5
10
Figure 6. Base−Emitter Temperature Coefficient
Figure 8. Current−Gain − Bandwidth Product
-55°C to +125°C
0.7 1.0
10 mS
1 mS
I
I
C
C
, COLLECTOR CURRENT (mAdc)
2.0
, COLLECTOR CURRENT (mA)
1.0
100
3.0
5.0
7.0
10
10
20
V
T
A
CE
= 25°C
= 10 V
30
100
50