BC847CDXV6T1G ON Semiconductor, BC847CDXV6T1G Datasheet - Page 2

TRANS NPN DUAL 45V SOT-563

BC847CDXV6T1G

Manufacturer Part Number
BC847CDXV6T1G
Description
TRANS NPN DUAL 45V SOT-563
Manufacturer
ON Semiconductor
Datasheet

Specifications of BC847CDXV6T1G

Transistor Type
2 NPN (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
600mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
420 @ 2mA, 5V
Power - Max
500mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
BC847CDXV6T1G
BC847CDXV6T1GOSTR

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
BC847CDXV6T1G
Manufacturer:
ON
Quantity:
30 000
Part Number:
BC847CDXV6T1G
Manufacturer:
ON/安森美
Quantity:
20 000
Company:
Part Number:
BC847CDXV6T1G
Quantity:
2 525
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
ORDERING INFORMATION
Specifications Brochure, BRD8011/D.
Collector −Emitter Breakdown Voltage
Collector −Emitter Breakdown Voltage
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Collector Cutoff Current (V
DC Current Gain
Collector −Emitter Saturation Voltage (I
Collector −Emitter Saturation Voltage
Base −Emitter Saturation Voltage (I
Base −Emitter Saturation Voltage
Base −Emitter Voltage (I
Base −Emitter Voltage
Current −Gain − Bandwidth Product
Output Capacitance (V
Noise Figure
BC847CDXV6T1G
BC847CDXV6T5G
BC848CDXV6T1G
(I
(I
(I
(I
(I
(I
(I
(I
C
C
C
E
C
C
C
C
= 1.0 mA)
= 10 mA)
= 10 mA, V
= 10 mA)
= 10 mA, V
= 2.0 mA, V
= 10 mA, V
= 0.2 mA, V
Device
EB
CE
CE
CE
CE
= 0)
= 5.0 V)
= 5.0 Vdc, f = 100 MHz)
= 5.0 V)
= 5.0 Vdc, R
(I
CB
(V
C
C
CB
= 10 V, f = 1.0 MHz)
= 2.0 mA, V
= 10 mA, V
CB
= 30 V, T
= 30 V)
Characteristic
S
(I
= 2.0 kW,f = 1.0 kHz, BW = 200 Hz)
C
C
= 10 mA, I
= 100 mA, I
(I
CE
CE
A
C
C
= 150°C)
Specific Marking
= 5.0 V)
(T
= 10 mA, I
= 100 mA, I
= 5.0 V)
A
= 25°C unless otherwise noted)
B
1G
1L
B
= 0.5 mA)
= 5.0 mA)
B
B
= 0.5 mA)
= 5.0 mA)
http://onsemi.com
BC847CDXV6T1
BC848CDXV6T1
BC847CDXV6T1
BC848CDXV6T1
BC847CDXV6T1
BC848CDXV6T1
BC847CDXV6T1
BC848CDXV6T1
2
(Pb−Free)
(Pb−Free)
(Pb−Free)
SOT−563
SOT−563
SOT−563
Package
V
V
V
V
Symbol
V
V
V
(BR)CEO
(BR)CES
(BR)CBO
(BR)EBO
CE(sat)
C
I
BE(sat)
BE(on)
CBO
h
NF
f
obo
FE
T
Min
420
580
100
6.0
5.0
45
30
50
30
50
30
4000 Units / Tape & Reel
8000 Units / Tape & Reel
4000 Units / Tape & Reel
Typ
270
520
660
0.7
0.9
Shipping
Max
0.25
800
700
770
5.0
0.6
1.5
15
10
MHz
Unit
mV
nA
dB
mA
pF
V
V
V
V
V
V

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