EMX2DXV6T5G ON Semiconductor, EMX2DXV6T5G Datasheet - Page 2

• Manufacturer Part Number: EMX2DXV6T5G
• Description: TRANS NPN GP DUAL 60V SOT-563
• Manufacturer: ON Semiconductor

Specifications of EMX2DXV6T5G

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 1mA, 6V
• Power - Max: 500mW
• Frequency - Transition: 180MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-563, SOT-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

2. Device mounted on a FR-4 glass epoxy printed circuit board using the minimum recommended footprint.
3. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
ELECTRICAL CHARACTERISTICS
Collector-Base Breakdown Voltage
Collector-Emitter Breakdown Voltage
Emitter-Base Breakdown Voltage
Collector-Base Cutoff Current
Emitter-Base Cutoff Current
Collector-Emitter Saturation Voltage (Note 2)
DC Current Gain (Note 3)
Transition Frequency
Output Capacitance
(I
(I
(I
(V
(V
(I
(V
(V
(V
C
C
E
C
CE
CB
EB
CE
CB
= 50 mAdc, I
= 50 mAdc, I
= 1.0 mAdc, I
= 50 mAdc, I
= 12 Vdc, I
= 7.0 Vdc, I
= 60 Vdc, I
= 6.0 Vdc, I
= 12 Vdc, I
E
E
C
B
E
C
B
B
C
= 0)
= 0)
= 2.0 mAdc, f = 30 MHz)
= 5.0 mAdc)
= 0)
= 0 Adc, f = 1 MHz)
= 0)
= 0)
= 1.0 mAdc)
Characteristic
(T
A
= 25°C)
http://onsemi.com
2
V
V
V
Symbol
V
(BR)CBO
(BR)CEO
(BR)EBO
I
I
CE(sat)
C
h
CBO
EBO
f
FE
OB
T
Min
120
7.0
60
50
−
−
−
−
−
Typ
180
2.0
−
−
−
−
−
−
−
Max
560
0.5
0.5
0.4
−
−
−
−
−
MHz
Unit
Vdc
Vdc
Vdc
Vdc
mA
mA
pF
−