EMX2DXV6T5G ON Semiconductor, EMX2DXV6T5G Datasheet
EMX2DXV6T5G
Manufacturer Part Number
EMX2DXV6T5G
Description
TRANS NPN GP DUAL 60V SOT-563
Manufacturer
ON Semiconductor
Datasheet
1.EMX2DXV6T5G.pdf
(4 pages)
Specifications of EMX2DXV6T5G
Transistor Type
2 NPN (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
400mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
120 @ 1mA, 6V
Power - Max
500mW
Frequency - Transition
180MHz
Mounting Type
Surface Mount
Package / Case
SOT-563, SOT-6
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
EMX2DXV6T5G
Manufacturer:
ON
Quantity:
30 000
EMX2DXV6T5
Dual NPN General Purpose
Amplifier Transistor
applications. This device is housed in the SOT-563 package which is
designed for low power surface mount applications, where board
space is at a premium.
Features
•
•
•
•
Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits are
exceeded, device functional operation is not implied, damage may occur and
reliability may be affected.
1. FR−4 @ Minimum Pad
© Semiconductor Components Industries, LLC, 2005
November, 2005 − Rev. 2
MAXIMUM RATINGS
THERMAL CHARACTERISTICS
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current − Continuous
Total Device Dissipation
Derate above 25°C
Thermal Resistance,
Total Device Dissipation
Derate above 25°C
Thermal Resistance,
Junction and Storage
This NPN transistor is designed for general purpose amplifier
Reduces Board Space
High h
Low V
These are Pb−Free Devices
T
Junction-to-Ambient
T
Junction-to-Ambient
Temperature Range
A
(Both Junctions Heated)
A
(One Junction Heated)
= 25°C
= 25°C
FE
CE(sat)
Characteristic
Characteristic
, 210−460 (Typical)
Rating
, < 0.5 V
(T
A
= 25°C)
Preferred Devices
V
V
V
Symbol
Symbol
Symbol
T
(BR)CBO
(BR)CEO
(BR)EBO
R
R
J
P
P
, T
I
qJA
qJA
C
D
D
stg
357 (Note 1)
350 (Note 1)
500 (Note 1)
250 (Note 1)
2.9 (Note 1)
4.0 (Note 1)
−55 to +150
Value
Max
Max
100
7.0
60
50
mW/°C
mW/°C
1
mAdc
°C/W
°C/W
Unit
Unit
Unit
mW
mW
Vdc
Vdc
Vdc
°C
EMX2DXV6T5
EMX2DXV6T5G
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
6
Device
(Note: Microdot may be in either location)
(3)
PURPOSE AMPLIFIER
DUAL NPN GENERAL
1
ORDERING INFORMATION
SURFACE MOUNT
3R = Specific Device Code
M
G
Q
TRANSISTORS
2
http://onsemi.com
= Month Code
= Pb−Free Package
CASE 463A
(Pb−Free)
(Pb−Free)
(2)
(4) (5)
SOT−563
SOT−563
SOT−563
STYLE 2
Package
Publication Order Number:
8000/Tape & Reel
8000/Tape & Reel
EMX2DXV6T5/D
1
MARKING
DIAGRAM
(1)
Shipping
(6)
3R M G
Q
1
G
†
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EMX2DXV6T5G Summary of contents
Page 1
... ORDERING INFORMATION Device Package Shipping EMX2DXV6T5 SOT−563 8000/Tape & Reel (Pb−Free) EMX2DXV6T5G SOT−563 8000/Tape & Reel (Pb−Free) †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. ...
Page 2
ELECTRICAL CHARACTERISTICS Characteristic Collector-Base Breakdown Voltage ( mAdc Collector-Emitter Breakdown Voltage (I = 1.0 mAdc Emitter-Base Breakdown Voltage ( mAdc Collector-Base ...
Page 3
TYPICAL ELECTRICAL CHARACTERISTICS 25° COLLECTOR VOLTAGE (V) CE Figure 1. I − 1.5 1 0.5 0 0.01 0 ...
Page 4
... M *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein ...