MBT3904DW1T1G ON Semiconductor, MBT3904DW1T1G Datasheet - Page 2

• Manufacturer Part Number: MBT3904DW1T1G
• Description: TRANS DUAL GP 200MA 40V SC88
• Manufacturer: ON Semiconductor

Specifications of MBT3904DW1T1G

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 150mW
• Frequency - Transition: 300MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Configuration: Dual
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40/40 V
• Emitter- Base Voltage Vebo: 6 V
• Continuous Collector Current: - 2 A
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 625 mW
• Maximum Operating Frequency: 300 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 40 at 0.1 mA at 1 V
• Minimum Operating Temperature: - 55 C
• Collector Emitter Voltage V(br)ceo: 40V
• Transition Frequency Typ Ft: 300Hz
• Power Dissipation Pd: 150mW
• Dc Collector Current: 200mA
• Dc Current Gain Hfe: 300
• No. Of Pins: 6
• Rohs Compliant: Yes
• Module Configuration: Dual
• Number Of Elements: 2
• Collector-emitter Voltage: 40V
• Collector-base Voltage: 60V
• Emitter-base Voltage: 6V
• Collector Current (dc) (max): 200mA
• Frequency (max): 300MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 6
• Package Type: SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MBT3904DW1T1GOSTR

2. Pulse Test: Pulse Width ≤ 300 ms; Duty Cycle ≤ 2.0%.
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
Collector −Emitter Breakdown Voltage (Note 2)
Collector −Base Breakdown Voltage
Emitter −Base Breakdown Voltage
Base Cutoff Current
Collector Cutoff Current
DC Current Gain
Collector −Emitter Saturation Voltage
Base −Emitter Saturation Voltage
Current −Gain − Bandwidth Product
Output Capacitance
Input Capacitance
Input Impedance
Voltage Feedback Ratio
Small −Signal Current Gain
Output Admittance
Noise Figure
(I
(I
(I
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
(I
(I
(V
(V
(V
(V
(V
(V
(V
C
C
E
C
C
C
C
C
C
C
C
C
C
CE
CE
CB
EB
CE
CE
CE
CE
CE
= 10 mAdc, I
= 1.0 mAdc, I
= 10 mAdc, I
= 0.1 mAdc, V
= 1.0 mAdc, V
= 10 mAdc, V
= 50 mAdc, V
= 100 mAdc, V
= 10 mAdc, I
= 50 mAdc, I
= 10 mAdc, I
= 50 mAdc, I
= 10 mAdc, V
= 30 Vdc, V
= 30 Vdc, V
= 5.0 Vdc, I
= 0.5 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
= 10 Vdc, I
= 5.0 Vdc, I
C
E
B
B
B
B
C
C
C
C
B
C
CE
CE
CE
E
C
EB
EB
= 0)
= 0)
CE
CE
= 1.0 mAdc)
= 5.0 mAdc)
= 1.0 mAdc)
= 5.0 mAdc)
CE
= 1.0 mAdc, f = 1.0 kHz)
= 1.0 mAdc, f = 1.0 kHz)
= 1.0 mAdc, f = 1.0 kHz)
= 1.0 mAdc, f = 1.0 kHz)
= 0)
= 0, f = 1.0 MHz)
= 0, f = 1.0 MHz)
= 100 mAdc, R
= 1.0 Vdc)
= 1.0 Vdc)
= 20 Vdc, f = 100 MHz)
= 3.0 Vdc)
= 3.0 Vdc)
= 1.0 Vdc)
= 1.0 Vdc)
= 1.0 Vdc)
(Note 2)
S
Characteristic
= 1.0 k W, f = 1.0 kHz)
(T
A
= 25°C unless otherwise noted)
http://onsemi.com
2
V
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
(BR)EBO
CE(sat)
BE(sat)
C
I
C
h
h
CEX
NF
I
h
h
h
BL
f
obo
FE
ibo
oe
T
re
fe
ie
0.65
Min
100
300
100
100
6.0
1.0
2.0
0.5
0.1
1.0
3.0
40
60
40
70
60
30
−
−
−
−
−
−
−
−
−
Max
0.85
0.95
300
400
400
0.2
0.3
4.0
8.0
8.0
5.0
4.0
50
50
10
12
10
40
60
−
−
−
−
−
−
−
−
X 10
mmhos
nAdc
nAdc
Unit
MHz
Vdc
Vdc
Vdc
Vdc
Vdc
k W
dB
pF
pF
−
−
− 4