BC 857S H6827 Infineon Technologies, BC 857S H6827 Datasheet - Page 3

• Manufacturer Part Number: BC 857S H6827
• Description: TRANS PNP ARRAY 45V 100MA SOT363
• Manufacturer: Infineon Technologies

Specifications of BC 857S H6827

• Transistor Type: 2 PNP (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Vce Saturation (max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 250mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -

Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
I
Collector-base breakdown voltage
I
I
Emitter-base breakdown voltage
I
Collector-base cutoff current
V
V
DC current gain
I
I
Collector-emitter saturation voltage
I
I
Base emitter saturation voltage
I
I
Base-emitter voltage
I
I
1
C
C
C
C
E
C
C
C
C
C
C
C
C
Pulse test: t < 300µs; D < 2%
CB
CB
= 10 µA, I
= 10 mA, I
= 10 mA, I
= 10 µA, I
= 10 µA, I
= 10 µA, V
= 2 mA, V
= 10 mA, I
= 100 mA, I
= 10 mA, I
= 100 mA, I
= 2 mA, V
= 10 mA, V
= 45 V, I
= 45 V, I
C
E
E
CE
CE
B
B
B
B
E
E
CE
CE
= 0 , BC856S/U
= 0 , BC857S
= 0
B
B
= 0 , BC856S/U
= 0 , BC857S
= 0.5 mA
= 0.5 mA
= 0
= 0 , T
1)
= 5 V
= 5 V
= 5 mA
= 5 mA
= 5 V
= 5 V
1)
A
= 150 °C
1)
A
= 25°C, unless otherwise specified
1)
3
Symbol
V
V
V
I
h
V
V
V
CBO
FE
(BR)CEO
(BR)CBO
(BR)EBO
CEsat
BEsat
BE(ON)
min.
200
600
65
45
80
50
5
-
-
-
-
-
-
-
-
BC856S/U_BC857S
Values
250
290
250
700
850
650
typ.
75
-
-
-
-
-
-
-
-
0.015
max.
630
300
650
750
820
5
2008-01-18
-
-
-
-
-
-
-
-
Unit
-
V
µA
-
mV
-
mV