BC 857S H6827 Infineon Technologies, BC 857S H6827 Datasheet

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BC 857S H6827

Manufacturer Part Number
BC 857S H6827
Description
TRANS PNP ARRAY 45V 100MA SOT363
Manufacturer
Infineon Technologies
Datasheet

Specifications of BC 857S H6827

Transistor Type
2 PNP (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
650mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 2mA, 5V
Power - Max
250mW
Frequency - Transition
250MHz
Mounting Type
Surface Mount
Package / Case
SC-70-6, SC-88, SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
PNP Silicon AF Transistor Arrays
• For AF input stages and driver applications
• High current gain
• Low collector-emitter saturation voltage
• Two (galvanic) internal isolated transistor
• BC856S / U, BC857S: For orientation in reel see
• Pb-free (RoHS compliant) package
• Qualified according AEC Q101
BC856S/U
BC857S
Type
BC856S
BC856U
BC857S
1
Pb-containing package may be available upon special request
TR1
with good matching in one package
package information below
C1
E1
6
1
B2
B1
5
2
E2
C2
4
3
EHA07175
TR2
Marking
3Ds
3Ds
3Cs
1)
1=E1
1=E1
1=E1
2=B1
2=B1
2=B1
1
Pin Configuration
3=C2
3=C2
3=C2
4=E2
4=E2
4=E2
5=B2
5=B2
5=B2
BC856S/U_BC857S
6=C1
6=C1
6=C1
Package
SOT363
SC74
SOT363
2008-01-18

Related parts for BC 857S H6827

BC 857S H6827 Summary of contents

Page 1

PNP Silicon AF Transistor Arrays • For AF input stages and driver applications • High current gain • Low collector-emitter saturation voltage • Two (galvanic) internal isolated transistor with good matching in one package • BC856S / U, BC857S: For ...

Page 2

Maximum Ratings Parameter Collector-emitter voltage BC856S/U BC857S Collector-base voltage BC856S, BC856U BC857S Emitter-base voltage Collector current Peak collector current Total power dissipation- ≤ 115 °C, BC856S T S ≤ 118 °C, BC856U, BC857U T S Junction temperature Storage temperature Thermal ...

Page 3

Electrical Characteristics at T Parameter DC Characteristics Collector-emitter breakdown voltage mA BC856S mA BC857S C B Collector-base breakdown voltage µA, I ...

Page 4

Electrical Characteristics at T Parameter AC Characteristics Transition frequency mA 100 MHz C CE Collector-base capacitance MHz CB Emitter-base capacitance V = 0.5 V, ...

Page 5

DC current gain 100 - Base-emitter ...

Page 6

Transition frequency MHz Total power dissipation P BC856S, BC857S 300 mW 250 225 200 175 ...

Page 7

Permissible Pulse Load R BC856S; BC857S 0.5 0.2 0.1 0.05 0. 0.01 0.005 Permissible Puls Load R thJS ...

Page 8

Package Outline 2.9 (2.25 Pin 1 marking Foot Print Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Pin 1 marking Laser marking Standard Packing Reel ø180 mm = 3.000 Pieces/Reel ...

Page 9

Package Outline Pin 1 marking Foot Print Marking Layout (Example) Small variations in positioning of Date code, Type code and Manufacture are possible. Pin 1 marking Laser marking Standard Packing Reel ø180 mm = 3.000 Pieces/Reel Reel ø330 mm = ...

Page 10

... For information on the types in question please contact your nearest Infineon Technologies Office. Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies failure of such components can reasonably be expected to cause the failure of that life-support device or system affect the safety or effectiveness of that device or system ...

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