SMBT 3904PN E6327 Infineon Technologies, SMBT 3904PN E6327 Datasheet - Page 2

• Manufacturer Part Number: SMBT 3904PN E6327
• Description: TRANSISTOR ARRAY NPN/PNP SOT-363
• Manufacturer: Infineon Technologies

Specifications of SMBT 3904PN E6327

• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 100 @ 10mA, 1V
• Power - Max: 250mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-6, SC-88, SOT-363
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: SMBT3904PNE6327XT; SP000014740

Electrical Characteristics at T
Parameter
DC Characteristics
Collector-emitter breakdown voltage
I
Collector-base breakdown voltage
I
Emitter-base breakdown voltage
I
Collector-base cutoff current
V
DC current gain
I
I
I
I
I
Collector-emitter saturation voltage
I
I
Base emitter saturation voltage
I
I
1
2
Thermal Resistance
Parameter
Junction - soldering point
SMBT3904PN
SMBT3904UPN
C
C
E
C
C
C
C
C
C
C
C
C
For calculation of R
Pulse test: t < 300µs; D < 2%
CB
= 10 µA, I
= 1 mA, I
= 10 µA, I
= 100 µA, V
= 1 mA, V
= 10 mA, V
= 50 mA, V
= 100 mA, V
= 10 mA, I
= 50 mA, I
= 10 mA, I
= 50 mA, I
= 30 V, I
B
C
E
CE
B
B
B
B
E
= 0
CE
CE
= 0
= 0
CE
= 1 mA
= 5 mA
= 1 mA
= 5 mA
= 0
CE
2)
= 1 V
thJA
= 1 V
= 1 V
= 1 V
= 1 V
please refer to Application Note Thermal Resistance
1)
2)
A
= 25°C, unless otherwise specified
2)
2
Symbol
V
V
V
I
h
V
V
Symbol
R
CBO
FE
(BR)CEO
(BR)CBO
(BR)EBO
CEsat
BEsat
thJS
min.
0.65
100
40
70
60
30
40
40
6
-
-
-
-
Values
Value
typ.
140
135
-
-
-
-
-
-
-
-
-
-
-
-
-
SMBT3904...PN
max.
0.25
0.85
0.95
300
0.4
50
2007-03-28
-
-
-
-
-
-
-
Unit
V
nA
-
V
Unit
K/W