BC 856S E6327 Infineon Technologies, BC 856S E6327 Datasheet - Page 6

• Manufacturer Part Number: BC 856S E6327
• Description: TRANSISTOR PNP AF 65V SOT-363
• Manufacturer: Infineon Technologies

Specifications of BC 856S E6327

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 PNP (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 65V
• Vce Saturation (max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 250mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 200 at 2 mA at 5 V
• Configuration: Dual
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 65 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 250 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BC856SE6327XT; SP000012942

Transition frequency f
V
Total power dissipation P
BC856S, BC857S
f
T
CE
MHz
mW
10
10
10
300
250
225
200
175
150
125
100
5
5
= 5 V
75
50
25
3
2
1
10
0
0
-1
15
30
5
45
10
0
60
T
75
= ƒ(I
5
90 105 120 °C
tot
10
= ƒ(T
C
1
)
S
EHP00378
mA
Ι
)
C
T
S
10
150
2
6
Collector-base capacitance C
Emitter-base capacitance C
Total power dissipation P
BC856U
mW
pF
300
250
225
200
175
150
125
100
12
10
75
50
25
9
8
7
6
5
4
3
2
1
0
0
0
0
15
4
30
45
8
BC856S/U_BC857S
CEB
60
75
12
90 105 120 °C
tot
eb
= ƒ(T
16
cb
2008-01-18
= ƒ(V
= ƒ(V
S
V
)
V
T
EB
CB
S
CCB
CB
)
(V
150
22
)
EB
)