BC 856S E6327 Infineon Technologies, BC 856S E6327 Datasheet - Page 2

• Manufacturer Part Number: BC 856S E6327
• Description: TRANSISTOR PNP AF 65V SOT-363
• Manufacturer: Infineon Technologies

Specifications of BC 856S E6327

• Package / Case: SC-70-6, SC-88, SOT-363
• Transistor Type: 2 PNP (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 65V
• Vce Saturation (max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 250mW
• Frequency - Transition: 250MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 200 at 2 mA at 5 V
• Configuration: Dual
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 65 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 250 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: BC856SE6327XT; SP000012942

Maximum Ratings
Parameter
Collector-emitter voltage
BC856S/U
BC857S
Collector-base voltage
BC856S, BC856U
BC857S
Emitter-base voltage
Collector current
Peak collector current
Total power dissipation-
T
T
Junction temperature
Storage temperature
1
Thermal Resistance
Parameter
Junction - soldering point
BC856S, BC857S
BC856U
For calculation of R
S
S
≤ 115 °C, BC856S
≤ 118 °C, BC856U, BC857U
thJA
please refer to Application Note Thermal Resistance
1)
2
Symbol
V
V
V
I
I
P
T
T
Symbol
R
C
CM
j
stg
CEO
CBO
EBO
tot
thJS
-65 ... 150
BC856S/U_BC857S
Value
Value
≤ 140
≤ 130
250
250
100
200
150
65
45
80
50
5
2008-01-18
Unit
-
V
mA
-
°C
Unit
K/W