TPC6701(TE85L,F) Toshiba, TPC6701(TE85L,F) Datasheet

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TPC6701(TE85L,F)

Manufacturer Part Number
TPC6701(TE85L,F)
Description
TRANS NPN DUAL 50V 1A VS6 2-3T1D
Manufacturer
Toshiba
Datasheet

Specifications of TPC6701(TE85L,F)

Transistor Type
2 NPN (Dual)
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
50V
Vce Saturation (max) @ Ib, Ic
170mV @ 6mA, 300mA
Dc Current Gain (hfe) (min) @ Ic, Vce
400 @ 100mA, 2V
Power - Max
400mW
Mounting Type
Surface Mount
Package / Case
2-3T1D
Configuration
Dual
Transistor Polarity
N-Channel
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
Lead Free Status / Rohs Status
 Details
High-Speed Switching Applications
Motor Drive Applications
Inverter Lighting Applications
Maximum Ratings
Two NPN transistors are mounted on a compact and slim package.
High DC current gain: h
Low collector-emitter saturation voltage: V
High-speed switching: t
Collector-base voltage
Collector-emitter voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Base current
Collector power dissipation
(single-device operation)
Total collector power dissipation
(simultaneous operation)
Thermal resistance, junction to
ambient (single-device operation)
Junction temperature
Storage temperature range
Note 1: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm
Note 2: Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm
Total collector power dissipation value when two devices are operated at the same time
Characteristics
TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type
(Ta = 25°C)
f
Pulse
FE
= 85 ns (typ.)
DC
= 400 to 1000 (I
Symbol
R
V
V
V
V
P
th (j-a)
T
I
P
CBO
CEO
EBO
CEX
I
CP
(Note 1)
(Note 2)
(Note 1)
I
T
stg
CT
C
B
C
TPC6701
j
CE (sat)
C
= 0.1 A)
−55 to 150
= 0.17 V (max)
Rating
100
400
660
312
150
1.0
2.0
0.1
80
50
7
1
°C/W
Unit
mW
mW
mA
°C
°C
V
V
V
V
A
Weight: 0.011 g (typ.)
JEDEC
JEITA
TOSHIBA
2
2
)
)
2-3T1D
2004-07-07
TPC6701
Unit: mm

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TPC6701(TE85L,F) Summary of contents

Page 1

... TOSHIBA Multi-Chip Transistor Silicon NPN Epitaxial Type High-Speed Switching Applications Motor Drive Applications Inverter Lighting Applications • Two NPN transistors are mounted on a compact and slim package. • High DC current gain 400 to 1000 (I FE • Low collector-emitter saturation voltage: V • High-speed switching (typ ...

Page 2

Electrical Characteristics Characteristics Collector cut-off current Emitter cut-off current Collector-emitter breakdown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Rise time Switching time Storage time Fall time I B1 Duty cycle < ...

Page 3

I – 0.4 Common emitter Ta = 25°C 0.2 Single nonrepetitive pulse 0.2 0.4 0.6 0.8 1.0 Collector-emitter voltage ...

Page 4

Transient Thermal Resistance r 1000 100 10 1 0.001 0.01 Safe Operating Area 10 100 µs* 10 µ max (pulsed)* 10 ms max (continuous) 100 ms operation (Ta = 25°C) ...

Page 5

... The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • ...

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