TPCP8701(TE85L,F) Toshiba, TPCP8701(TE85L,F) Datasheet - Page 3

• Manufacturer Part Number: TPCP8701(TE85L,F)
• Description: IC TRANS DUAL NPN 50V 2-3V1C
• Manufacturer: Toshiba

Specifications of TPCP8701(TE85L,F)

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 140mV @ 20mA, 1A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 400 @ 300mA, 2V
• Power - Max: 940mW
• Mounting Type: Surface Mount
• Package / Case: *
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Frequency - Transition: -

0.001
0.01
0.1
0.001
4
3
2
1
0
1
3
2
1
0
0
0
Common emitter
β = 50
Single nonrepetitive pulse
Common emitter
Ta = 25°C
Single nonrepetitive pulse
Common emitter
V CE = 2 V
Single nonrepetitive pulse
Base−emitter saturation voltage V
Collector−emitter voltage V
0.2
70
Ta = 100°C
Collector current I
0.01
25°C
0.4
Ta = 100°C
V
0.4
CE (sat)
I
I
C
C
60
– V
– V
0.1
0.8
CE
BE
– I
0.6
25°C
C
−55°C
−55°C
C
50
CE
(A)
1.2
I B = 1 mA
1
0.8
BE
40
30
20
5
2
10
(V)
(V)
1.0
1.6
10
(2)
3
10000
1000
0.8
0.6
0.4
0.2
1.0
100
0.1
10
0.001
10
0.001
0
1
0
Common emitter
β = 50
Single nonrepetitive pulse
Common emitter
V CE = 2 V
Single nonrepetitive pulse
(2)
(1)
20
Ta = 100°C
25°C
Ambient temperature Ta (°C)
Collector current I
Collector current I
40
0.01
0.01
−55°C
25°C
DC Operation
Mounted on an FR4 board glass epoxy,
1.6 mm thick, Cu area: 645 mm
(1) Single-device operation
(2) Single-device value at dual operation
Ta = −55°C
60
V
BE (sat)
P
h
c
FE
80
– Ta
0.1
0.1
– I
100°C
Ta = 25°C
C
– I
100
C
C
C
120
(A)
(A)
1
1
2
)
140
TPCP8701
2004-05-11
160
10
10