TPCP8701(TE85L,F) Toshiba, TPCP8701(TE85L,F) Datasheet

TPCP8701(TE85L,F)

Manufacturer Part Number

TPCP8701(TE85L,F)

Description

IC TRANS DUAL NPN 50V 2-3V1C

Manufacturer

Toshiba

Datasheet

1.TPCP8701TE85LF.pdf (5 pages)

Specifications of TPCP8701(TE85L,F)

Transistor Type

2 NPN (Dual)

Current - Collector (ic) (max)

Voltage - Collector Emitter Breakdown (max)

50V

Vce Saturation (max) @ Ib, Ic

140mV @ 20mA, 1A

Dc Current Gain (hfe) (min) @ Ic, Vce

400 @ 300mA, 2V

Power - Max

940mW

Mounting Type

Surface Mount

Package / Case

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Current - Collector Cutoff (max)

Frequency - Transition

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Portable Equipment Applications

Switching Applications

Inverter Lighting Applications

•

Maximum Ratings

Small footprint due to small and thin package

High DC current gain : h

Low collector-emitter saturation : V

High-speed switching : t

Collector-base voltage

Collector-emitter voltage

Emitter-base voltage

Collector current

Base current

Collector power

dissipation (t = 10s)

Collector power

dissipation (DC)

Junction temperature

Storage temperature range

Note 1: Please use devices on condition that the junction temperature is

Note 2: Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm

Note 3: ● on lower left on the marking indicates Pin 1.

※ Weekly code: (Three digits)

below 150°C.

Characteristics

Pulse (Note 1 )

DC (Note 1)

Single-device

value at dual

(Ta = 25°C)

operation

Week of manufacture

(01 for first week of year, continues up to 52 or 53)

Year of manufacture

(One low-order digits of calendar year)

= 120 ns (typ.)

TOSHIBA Transistor Silicon NPN Epitaxial Type

= 400 to 1000 (I

Pc (Note 2)

CE (sat)

Symbol

TPCP8701

CBO

CEO

EBO

CEX

stg

= 0.14 V (max)

= 0.3 A)

−55 to 150

Rating

1.77

0.95

0.94

0.54

100

300

150

3.0

5.0

Unit

°C

)

Weight: 0.017 g (typ.)

Figure 1.

Circuit configuration

(Top View)

JEDEC

JEITA

TOSHIBA

0.475

Figure 2. Marking

1.Emitter1

2.Base1

3.Emitter2

4.Base2

0.33±0.05

8　　7 　6 　5

1　 2　 3　 4

8　 7 6 　 5

1　 2　 3

0.65

0.025

8701

2.9±0.1

0.17±0.02

5.Collector2

6.Collector2

7.Collector1

8.Collector1

0.05

(Weekly code)

(Note 3)

Lot No.

TPCP8701

2-3V1C

※

2004-05-11

―

0.28

1.12

0.28

0.8±0.05

+0.1

+0.13

+0.1

-0.11

-0.12

-0.11

0.05

Unit: mm

Type

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TPCP8701(TE85L,F) Summary of contents

Page 1

... TOSHIBA Transistor Silicon NPN Epitaxial Type Portable Equipment Applications Switching Applications Inverter Lighting Applications • Small footprint due to small and thin package • High DC current gain : h = 400 to 1000 (I FE • Low collector-emitter saturation : V • High-speed switching : t = 120 ns (typ.) f Maximum Ratings (Ta = 25°C) ...

Page 2

Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-emitter brakedown voltage DC current gain Collector-emitter saturation voltage Base-emitter saturation voltage Collector output capacitance Rise time Switching time Storage time Fall time Figure 3. Switching Time Test ...

Page 3

I – Common emitter Ta = 25°C Single nonrepetitive pulse 0.2 0.4 0.6 0.8 Collector−emitter voltage V ...

Page 4

Curves should be applied in thermal limited area. Single nonrepetitive pulse Ta = 25°C Mounted on FR4 board (glass epoxy, 1.6 mm thick, Cu area: 645 mm (1) Single-device operation (2) Single-device value at dual operation 1 ...

Page 5

... The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • ...

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