PBSS5350SS,115 NXP Semiconductors, PBSS5350SS,115 Datasheet
PBSS5350SS,115
Specifications of PBSS5350SS,115
PBSS5350SS T/R
PBSS5350SS T/R
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PBSS5350SS,115 Summary of contents
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PBSS5350SS 50 V, 2.7 A PNP/PNP low V Rev. 01 — 3 April 2007 1. Product profile 1.1 General description PNP/PNP double low V power Surface-Mounted Device (SMD) plastic package. Table 1. Type number PBSS5350SS 1.2 Features I Low collector-emitter ...
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... NXP Semiconductors 2. Pinning information Table 3. Pin Ordering information Table 4. Type number PBSS5350SS 4. Marking Table 5. Type number PBSS5350SS 5. Limiting values Table 6. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per transistor V CBO V CEO V EBO tot PBSS5350SS_1 Product data sheet ...
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... NXP Semiconductors Table 6. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol Per device P tot amb T stg [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm ...
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... NXP Semiconductors 6. Thermal characteristics Table 7. Symbol Per transistor R th(j-a) R th(j-sp) Per device R th(j-a) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm [3] Device mounted on a ceramic PCB, Al ...
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... NXP Semiconductors 3 10 duty cycle = Z th(j-a) (K/W) 1 0.75 0.5 0.33 0.2 0.1 10 0.05 0.02 0. FR4 PCB, mounting pad for collector 1 cm Fig 3. Per transistor: Transient thermal impedance from junction to ambient as a function of pulse duration; typical values th(j-a) (K/W) duty cycle = ...
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... NXP Semiconductors 7. Characteristics Table unless otherwise specified. amb Symbol Parameter Per transistor I CBO I CES I EBO CEsat R CEsat V BEsat V BEon off C c [1] Pulse test: t PBSS5350SS_1 Product data sheet 50 V, 2.7 A PNP/PNP low V Characteristics Conditions collector-base cut-off current 150 C j collector-emitter cut-off current ...
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... NXP Semiconductors 600 h FE (1) 400 (2) 200 ( ( 100 C amb ( amb ( amb Fig 5. DC current gain as a function of collector current; typical values 1 (V) 0.8 (1) (2) ( amb ( amb ( 100 C amb Fig 7. Base-emitter voltage as a function of collector current; typical values PBSS5350SS_1 Product data sheet ...
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... NXP Semiconductors 1 V CEsat ( (1) ( 100 C amb ( amb ( amb Fig 9. Collector-emitter saturation voltage as a function of collector current; typical values CEsat ( ) ( 100 C amb ( amb ( amb Fig 11. Collector-emitter saturation resistance as a function of collector current; typical values PBSS5350SS_1 Product data sheet 50 V, 2.7 A PNP/PNP low V ...
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... NXP Semiconductors 8. Test information Fig 13. BISS transistor switching time definition Fig 14. Test circuit for switching times PBSS5350SS_1 Product data sheet 50 V, 2.7 A PNP/PNP low (probe) oscilloscope 450 100 mA Bon Rev. 01 — 3 April 2007 PBSS5350SS CEsat I (100 %) Bon I Boff off (probe) o oscilloscope ...
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... NXP Semiconductors 9. Package outline Fig 15. Package outline SOT96-1 (SO8) 10. Packing information Table 9. The indicated -xxx are the last three digits of the 12NC ordering code. Type number PBSS5350SS [1] For further information and the availability of packing methods, see PBSS5350SS_1 Product data sheet 50 V, 2.7 A PNP/PNP low V 5 ...
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... NXP Semiconductors 11. Soldering Fig 16. Reflow soldering footprint SOT96-1 (SO8) Fig 17. Wave soldering footprint SOT96-1 (SO8) PBSS5350SS_1 Product data sheet 50 V, 2.7 A PNP/PNP low V 5.50 0. solder lands occupied area placement accuracy 5.50 board direction solder lands solder resist placement accurracy ...
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... NXP Semiconductors 12. Revision history Table 10. Revision history Document ID Release date PBSS5350SS_1 20070403 PBSS5350SS_1 Product data sheet 50 V, 2.7 A PNP/PNP low V Data sheet status Change notice Product data sheet - Rev. 01 — 3 April 2007 PBSS5350SS (BISS) transistor CEsat Supersedes - © NXP B.V. 2007. All rights reserved. ...
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... For detailed and full information see the relevant full data sheet, which is available on request via the local NXP Semiconductors sales office. In case of any inconsistency or conflict with the short data sheet, the full data sheet shall prevail ...
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... NXP Semiconductors 15. Contents 1 Product profi 1.1 General description 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 9 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 10 Packing information Soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 12 Revision history ...