PBSS4350SPN,115 NXP Semiconductors, PBSS4350SPN,115 Datasheet - Page 13

• Manufacturer Part Number: PBSS4350SPN,115
• Description: TRANS NPN/PNP W/RES 50V 8SOIC
• Manufacturer: NXP Semiconductors

Specifications of PBSS4350SPN,115

• Package / Case: 8-SOIC (3.9mm Width)
• Transistor Type: NPN, PNP
• Current - Collector (ic) (max): 2.7A
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 340mV @ 270mA, 2.7A / 370mV @ 270mA, 2.7A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 300 @ 1A, 2V / 180 @ 1A, 2V
• Power - Max: 750mW
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Dual Common Collector
• Transistor Polarity: NPN/PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 2.7 A
• Power Dissipation: 1430 mW
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934061033115; PBSS4350SPN T/R; PBSS4350SPN T/R

NXP Semiconductors
8. Test information
PBSS4350SPN_1
Product data sheet
Fig 21. TR1 (NPN): BISS transistor switching time definition
Fig 22. TR1 (NPN): Test circuit for switching times
90 %
10 %
90 %
10 %
I
I
C
B
V
CC
= 10 V; I
oscilloscope
t
d
C
t
= 2 A; I
on
V
Rev. 01 — 5 April 2007
t
I
r
Bon
(probe)
450
= 100 mA; I
R1
R2
50 V, 2.7 A NPN/PNP low V
Boff
R
B
V
= 100 mA
BB
R
C
V
CC
DUT
V
o
mlb826
I
Bon
(probe)
450
PBSS4350SPN
I
t
(100 %)
Boff
s
t
off
oscilloscope
CEsat
input pulse
(idealized waveform)
output pulse
(idealized waveform)
© NXP B.V. 2007. All rights reserved.
(BISS) transistor
t
f
I
006aaa003
C
(100 %)
13 of 19
t