BCV64B,215 NXP Semiconductors, BCV64B,215 Datasheet - Page 2

TRANS PNP 30V 100MA DUAL SOT143B

BCV64B,215

Manufacturer Part Number
BCV64B,215
Description
TRANS PNP 30V 100MA DUAL SOT143B
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BCV64B,215

Package / Case
SOT-143, SOT-143B, TO-253AA
Transistor Type
2 PNP (Dual)
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
30V, 6V
Vce Saturation (max) @ Ib, Ic
650mV @ 5mA, 100mA / 250mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
220 @ 2mA, 5V / 220 @ 2mA, 700mV
Power - Max
250mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Dual
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
30 V at TR1, 6 V at TR2
Emitter- Base Voltage Vebo
6 V
Maximum Dc Collector Current
0.1 A
Power Dissipation
250 mW
Maximum Operating Frequency
100 MHz at TR1
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
933835240215
BCV64B T/R
BCV64B T/R
NXP Semiconductors
2. Pinning information
3. Ordering information
4. Marking
BCV64B
Product data sheet
Table 3.
Table 4.
Table 5.
[1]
Pin
1
2
3
4
Type number
BCV64B
Type number
BCV64B
* = -: made in Hong Kong
* = p: made in Hong Kong
* = t: made in Malaysia
* = W: made in China
Pinning
Ordering information
Marking codes
collector TR2 and base TR1
collector TR1
emitter TR1 and TR2
base TR2
Description
All information provided in this document is subject to legal disclaimers.
Package
Name
-
Rev. 4 — 2 August 2010
Description
plastic surface-mounted package; 4 leads
Marking code
*C6
PNP general-purpose double transistor
Simplified outline
4
1
[1]
2
3
Graphic symbol
© NXP B.V. 2010. All rights reserved.
BCV64B
TR1
3
2
TR2
Version
SOT143B
006aab230
1
4
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