BCM857BS,115 NXP Semiconductors, BCM857BS,115 Datasheet - Page 3
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BCM857BS,115
Manufacturer Part Number
BCM857BS,115
Description
TRANS PNP/PNP 45V 100MA SC88
Manufacturer
NXP Semiconductors
Datasheet
1.BCM857DS115.pdf
(15 pages)
Specifications of BCM857BS,115
Package / Case
SC-70-6, SC-88, SOT-363
Mounting Type
Surface Mount
Power - Max
300mW
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
45V
Transistor Type
2 PNP (Dual)
Frequency - Transition
175MHz
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 2mA, 5V
Vce Saturation (max) @ Ib, Ic
400mV @ 5mA, 100mA
Minimum Operating Temperature
- 65 C
Configuration
Dual
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.1 A
Power Dissipation
300 mW
Maximum Operating Frequency
175 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
934058729115::BCM857BS T/R::BCM857BS T/R
NXP Semiconductors
5. Limiting values
6. Thermal characteristics
BCM857BV_BS_DS_6
Product data sheet
Table 6.
In accordance with the Absolute Maximum Rating System (IEC 60134).
[1]
[2]
Table 7.
Symbol
Per transistor
V
V
V
I
I
P
Per device
P
T
T
T
Symbol
Per transistor
R
C
CM
j
amb
stg
CBO
CEO
EBO
tot
tot
th(j-a)
Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
Reflow soldering is the only recommended soldering method.
Parameter
thermal resistance from
junction to ambient
Limiting values
Thermal characteristics
SOT666
SOT363
SOT457
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
total power dissipation
total power dissipation
junction temperature
ambient temperature
storage temperature
SOT666
SOT363
SOT457
SOT666
SOT363
SOT457
Rev. 06 — 28 August 2009
Conditions
in free air
Conditions
open emitter
open base
open collector
single pulse;
t
T
T
p
amb
amb
1 ms
25 C
25 C
PNP/PNP matched double transistors
BCM857BV/BS/DS
[1][2]
[1]
[1]
[1][2]
[1][2]
Min
-
-
-
[1]
[1]
[1]
[1]
Min
-
-
-
-
-
-
-
-
-
-
-
-
65
65
Typ
-
-
-
© NXP B.V. 2009. All rights reserved.
Max
200
200
250
300
300
380
150
+150
+150
50
45
5
100
200
Max
625
625
500
Unit
V
V
V
mA
mA
mW
mW
mW
mW
mW
mW
C
C
C
Unit
K/W
K/W
K/W
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