PMBTA42DS,125 NXP Semiconductors, PMBTA42DS,125 Datasheet - Page 4

• Manufacturer Part Number: PMBTA42DS,125
• Description: TRANS NPN/NPN 300V 100MA SC-74
• Manufacturer: NXP Semiconductors

Specifications of PMBTA42DS,125

• Transistor Type: 2 NPN (Dual)
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 300V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 2mA, 20mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 30mA, 10V
• Power - Max: 420mW
• Frequency - Transition: 50MHz
• Mounting Type: Surface Mount
• Package / Case: SC-74-6
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 934059919125

NXP Semiconductors
7. Characteristics
PMBTA42DS_2
Product data sheet
Fig 1.
(mA)
I
C
200
150
100
50
0
0
T
Collector current as a function of
collector-emitter voltage; typical values
amb
= 25 C
2
Table 7.
T
Symbol
Per transistor
I
I
h
V
V
C
f
CBO
EBO
T
amb
4
FE
CEsat
BEsat
re
I
B
= 25 C unless otherwise specified
(mA) = 30
6
27
24
21
18
15
12
9
6
3
Parameter
collector-base
cut-off current
emitter-base
cut-off current
DC current gain
collector-emitter
saturation voltage
base-emitter
saturation voltage
feedback
capacitance
transition
frequency
Characteristics
8
006aaa688
V
CE
(V)
Rev. 02 — 27 August 2009
10
Conditions
V
V
V
V
V
I
I
V
f = 1 MHz
V
f = 100 MHz
C
C
CB
EB
CE
CE
CE
CB
CE
= 20 mA; I
= 20 mA; I
= 6 V; I
= 200 V; I
= 10 V; I
= 10 V; I
= 10 V; I
= 20 V; I
= 20 V; I
Fig 2.
C
h
(1) T
(2) T
(3) T
300
200
100
FE
C
C
C
B
B
C
C
= 0 A
E
0
10
= 2 mA
= 2 mA
= 1 mA
= 10 mA
= 30 mA
= i
= 10 mA;
= 0 A
V
DC current gain as a function of collector
current; typical values
amb
amb
amb
c
1
CE
NPN/NPN high-voltage double transistors
= 0 A;
= 10 V
= 150 C
= 25 C
= 55 C
1
(1)
(2)
(3)
Min
-
-
25
-
-
-
50
40
40
PMBTA42DS
10
Typ
-
-
-
-
-
-
-
-
-
I
© NXP B.V. 2009. All rights reserved.
C
(mA)
Max
100
100
-
-
-
500
900
3
-
mld391
10
2
Unit
nA
nA
mV
mV
pF
MHz
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