BCM847DS,115 NXP Semiconductors, BCM847DS,115 Datasheet - Page 5

• Manufacturer Part Number: BCM847DS,115
• Description: TRANS NPN/NPN 45V 100MA SC74
• Manufacturer: NXP Semiconductors

Specifications of BCM847DS,115

• Package / Case: SC-74-6
• Mounting Type: Surface Mount
• Power - Max: 380mW
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Transistor Type: 2 NPN (Dual)
• Frequency - Transition: 250MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 5mA, 100mA
• Minimum Operating Temperature: - 65 C
• Configuration: Dual
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 6 V
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 380 mW
• Maximum Operating Frequency: 250 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934059058115::BCM847DS T/R::BCM847DS T/R

NXP Semiconductors
BCM847BV_BS_DS_6
Product data sheet
Table 8.
T
[1]
[2]
[3]
[4]
Symbol
f
NF
Per device
h
V
T
amb
FE1
BE1
V
V
The smaller of the two values is taken as the numerator.
The smaller of the two values is subtracted from the larger value.
/h
= 25 C unless otherwise specified
BEsat
BE
V
FE2
BE2
decreases by about 2 mV/K with increasing temperature.
decreases by about 1.7 mV/K with increasing temperature.
Characteristics
Parameter
transition frequency
noise figure
h
V
FE
BE
matching
matching
Rev. 06 — 28 August 2009
…continued
Conditions
V
I
f = 100 MHz
V
I
R
f = 10 Hz to
15.7 kHz
V
I
R
f = 1 kHz;
B = 200 Hz
V
I
V
I
C
C
C
C
C
CE
CE
CE
CE
CE
S
S
= 10 mA;
= 0.2 mA;
= 0.2 mA;
= 2 mA
= 2 mA
= 2 k ;
= 2 k ;
= 5 V;
= 5 V;
= 5 V;
= 5 V;
= 5 V;
NPN/NPN matched double transistors
BCM847BV/BS/DS
[3]
[4]
Min
100
-
-
0.9
-
Typ
250
2.8
3.3
1
-
© NXP B.V. 2009. All rights reserved.
Max
-
-
-
-
2
Unit
MHz
dB
dB
mV
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